D476

2SD476(K), 2SD476A(K) Silicon NPN Triple Diffused Application Power switching complementary pair with 2SB566(K) and 2SB566A(K) Outline TO-220AB 1 23 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) PC * 1 Tj Tstg 1. Base 2. Collector (Flange) 3. Emitter Ratings 2SD476(K) 70 50 5 4 8 40 150 –55 to +150 2SD476A(K) 70 60 5 4 8 40 150 –55 to +150 Unit V V V A A W °C °C 2SD476(K), 2SD476A(K) Electrical Characteristics (Ta = 25°C) 2SD476(K) 2SD476A(K) Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 70 — — 70 — — V IC = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 50 — — 60 — — V IC = 50 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 —— 5 —— V IE = 10 µA, IC = 0 Collector cutoff current ICBO DC current transfer ratio hFE1 ——1 ——1 µA VCB = 50 V, IE = 0 60 — 200 60 — 200 VCE = 4 V, IC = 1 A (Pulse test) Collector to emitter saturation voltage hFE2 VCE(sat) 35 — —— — 35 — 1.0 — — — 1.0 V VCE = 4 V, IC = 0.1 A IC = 2 A, IB = 0.2 A Base to emitter saturation voltage VBE(sat) — — 1.2 — — 1.2 V Gain bandwidth product fT —7 — —7 — Turn on time ton — 0.3 — — 0.3 — Turn off time toff — 3.0 — — 3.0 — Storage time t...