Document
Advance Technical Data
HiPerFASTTM IGBT with Diode
IXGK 50N60B2D1 IXGX 50N60B2D1
B2-Class High Speed IGBTs
V CES
IC25 VCE(sat) t
fi(typ)
= 600 V = 75 A = 2.0 V = 65 ns
Symbol
Test Conditions
VCES V
CGR
VGES VGEM
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GE
=
1
MΩ
Continuous
Transient
IC25 TC = 25°C (limited by leads)
IC110
TC = 110°C
IF110 TC = 110°C (50N60B2D1 Diode)
ICM TC = 25°C, 1 ms
SSOA (RBSOA)
P C
TJ TJM Tstg Md Weight
VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V
T C
= 25°C
Mounting torque, TO-264
TO-264 PLUS247
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600 V 600 V
±20 V ±30 V
75 A 50 A 38 A 200 A
ICM = 80
A
400 W
-55 ... +150 150
-55 ... +150
°C °C °C
1.13/10 Nm/lb.in.
10 g 6g
300 °C
Symbol
Test Conditions
V GE(th)
I CES
IGES V
CE(sat)
I
C
=
250
µA,
V CE
=
V GE
V =V CE CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
I = 40 A, V = 15 V
C GE
Note 1
Characteristic Values (TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
3.0 5.0 V
T= J
25°C
TJ = 125°C
600 µA 5 mA
±100 nA
TJ = 125°C
1.6 2.0 1.5
V V
TO-264 (IXGK)
G C E
PLUS247 (IXGX)
(TAB)
G = Gate E = Emitter
C E
C = Collector Tab = Collector
(TAB)
Features
• High frequency IGBT and
anti-parallel FRED in one package
• High current handling capability • MOS Gate turn-on for drive simplicity • Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low IRM
Applications
• Switch-mode and resonant-mode
power supplies
• Uninterruptible power supplies (UPS) • DC choppers • AC motor speed control • DC servo and robot drives
Advantages
• Space savings (two devices in one
package)
• Easy to mount with 1 screw
© 2004 IXYS All rights reserved
DS99146A(03/04)
Symbol
g fs
C ies
Coes Cres
Qg Qge Qgc
t d(on)
t ri
t d(off)
tfi Eoff
td(on) tri E
on
td(off) tfi E
off
RthJC RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
I = 40 A; V = 10 V,
C CE
Note 1
VCE = 25 V, VGE = 0 V, f = 1 MHz
40 55
3500 220 50
S
pF pF pF
IC = 40 A, VGE = 15 V, VCE = 0.5 VCES
140 nC 23 nC 44 nC
Inductive
load,
T J
=
25°C
I = 40 A, V = 15 V
C GE
V CE
=
480
V,
R G
=
R off
=
5.0
Ω
Inductive load, TJ = 125°C IC = 40 A, VGE = 15 V VCE = 480 V, RG = Roff = 5.0 Ω
18 ns 25 ns 190 300 ns 65 ns 0.55 0.85 mJ
18 25 0.9 290 140 1.55
ns ns mJ ns ns mJ
0.31 K/W
0.15
K/W
IXGK 50N60B2D1 IXGX 50N60B2D1
TO-264 Outline
Dim.
A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
Millimeter Min. Max.
4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96
5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83
Inches Min. Max.
.190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786
.215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
PLUS247 Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
VF IF = 60 A, VGE = 0 V, Note 1
TJ = 150°C
2.1 V 1.4
IRM trr RthJC
IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µs TJ = 100°C V = 100 V
R
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
8.3 A 35 ns
0.65 K/W
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961
5,237,481 5,381,025 5,187,117 5,486,715
Terminals:
1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
Dim. Millimeter Min. Max.
A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 b1 1.91 2.13 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13
e 5.45 BSC L 19.81 20.32 L1 3.81 4.32
Q 5.59 6.20 R 4.32 4.83
Inches Min. Max.
.190 .205 .090 .100 .075 .085
.045 .055 .075 .084 .115 .123
.024 .031 .819 .840 .620 .635
.215 BSC .780 .800 .150 .170
.220 0.244 .170 .190
6,404,065B1 6,162,665 6,534,343 6,583,505 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
I C - Amperes
I C - Amperes
Fig. 1. Output Characte ristics
@ 25 Deg. C
80
VGE = 15V
9V
70 13V
11V
60
7V 50
40
30 6V
20
10
0 0.5
5V
1 1.5 2
VC E - Volts
2.5
3
Fig. 3. Output Characteristics
@ 125 Deg. C
80
VGE = 15V
9V
70 13V
11V
60 7V
50
40 6V 30
20
10 5V
0 0.5 1 1.5 2 2.5 3
VCE - Volts
Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage
3.7
TJ = 25ºC 3.4
3.1
IC = 80A 2.8 40A
20A 2.5
2.2
1.9
1.6
1.3
5 6 7 8 9 10 11 12 13 14 15 16 17
VG E - Volts
VC E - Volts
© 2004 IXYS All rights reserved
I C - Amperes
V C E (sat)- Normalized
I C - Amperes
IXGK 50N60B2D1 IXGX 50N60B2D1
Fig. 2. Extended Output Characte ristics
@ 25 de g. C
320
VGE = 15V
11V
280 13V
240 200 9V
160
120 7V
80
40 5V
0 0 1 2 3 45 6 7 8
VC E - Volts
Fig. 4.