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IXGK50N60B2D1 Dataheets PDF



Part Number IXGK50N60B2D1
Manufacturers IXYS
Logo IXYS
Description IGBT
Datasheet IXGK50N60B2D1 DatasheetIXGK50N60B2D1 Datasheet (PDF)

Advance Technical Data HiPerFASTTM IGBT with Diode IXGK 50N60B2D1 IXGX 50N60B2D1 B2-Class High Speed IGBTs V CES IC25 VCE(sat) t fi(typ) = 600 V = 75 A = 2.0 V = 65 ns Symbol Test Conditions VCES V CGR VGES VGEM TJ = 25°C to 150°C T J = 25°C to 150°C; R GE = 1 MΩ Continuous Transient IC25 TC = 25°C (limited by leads) IC110 TC = 110°C IF110 TC = 110°C (50N60B2D1 Diode) ICM TC = 25°C, 1 ms SSOA (RBSOA) P C TJ TJM Tstg Md Weight VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped .

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Advance Technical Data HiPerFASTTM IGBT with Diode IXGK 50N60B2D1 IXGX 50N60B2D1 B2-Class High Speed IGBTs V CES IC25 VCE(sat) t fi(typ) = 600 V = 75 A = 2.0 V = 65 ns Symbol Test Conditions VCES V CGR VGES VGEM TJ = 25°C to 150°C T J = 25°C to 150°C; R GE = 1 MΩ Continuous Transient IC25 TC = 25°C (limited by leads) IC110 TC = 110°C IF110 TC = 110°C (50N60B2D1 Diode) ICM TC = 25°C, 1 ms SSOA (RBSOA) P C TJ TJM Tstg Md Weight VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V T C = 25°C Mounting torque, TO-264 TO-264 PLUS247 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 600 V 600 V ±20 V ±30 V 75 A 50 A 38 A 200 A ICM = 80 A 400 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in. 10 g 6g 300 °C Symbol Test Conditions V GE(th) I CES IGES V CE(sat) I C = 250 µA, V CE = V GE V =V CE CES VGE = 0 V VCE = 0 V, VGE = ±20 V I = 40 A, V = 15 V C GE Note 1 Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 3.0 5.0 V T= J 25°C TJ = 125°C 600 µA 5 mA ±100 nA TJ = 125°C 1.6 2.0 1.5 V V TO-264 (IXGK) G C E PLUS247 (IXGX) (TAB) G = Gate E = Emitter C E C = Collector Tab = Collector (TAB) Features • High frequency IGBT and anti-parallel FRED in one package • High current handling capability • MOS Gate turn-on for drive simplicity • Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications • Switch-mode and resonant-mode power supplies • Uninterruptible power supplies (UPS) • DC choppers • AC motor speed control • DC servo and robot drives Advantages • Space savings (two devices in one package) • Easy to mount with 1 screw © 2004 IXYS All rights reserved DS99146A(03/04) Symbol g fs C ies Coes Cres Qg Qge Qgc t d(on) t ri t d(off) tfi Eoff td(on) tri E on td(off) tfi E off RthJC RthCK Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. I = 40 A; V = 10 V, C CE Note 1 VCE = 25 V, VGE = 0 V, f = 1 MHz 40 55 3500 220 50 S pF pF pF IC = 40 A, VGE = 15 V, VCE = 0.5 VCES 140 nC 23 nC 44 nC Inductive load, T J = 25°C I = 40 A, V = 15 V C GE V CE = 480 V, R G = R off = 5.0 Ω Inductive load, TJ = 125°C IC = 40 A, VGE = 15 V VCE = 480 V, RG = Roff = 5.0 Ω 18 ns 25 ns 190 300 ns 65 ns 0.55 0.85 mJ 18 25 0.9 290 140 1.55 ns ns mJ ns ns mJ 0.31 K/W 0.15 K/W IXGK 50N60B2D1 IXGX 50N60B2D1 TO-264 Outline Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247 Outline Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VF IF = 60 A, VGE = 0 V, Note 1 TJ = 150°C 2.1 V 1.4 IRM trr RthJC IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µs TJ = 100°C V = 100 V R IF = 1 A; -di/dt = 200 A/ms; VR = 30 V 8.3 A 35 ns 0.65 K/W Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,237,481 5,381,025 5,187,117 5,486,715 Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 b1 1.91 2.13 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,404,065B1 6,162,665 6,534,343 6,583,505 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344 I C - Amperes I C - Amperes Fig. 1. Output Characte ristics @ 25 Deg. C 80 VGE = 15V 9V 70 13V 11V 60 7V 50 40 30 6V 20 10 0 0.5 5V 1 1.5 2 VC E - Volts 2.5 3 Fig. 3. Output Characteristics @ 125 Deg. C 80 VGE = 15V 9V 70 13V 11V 60 7V 50 40 6V 30 20 10 5V 0 0.5 1 1.5 2 2.5 3 VCE - Volts Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 3.7 TJ = 25ºC 3.4 3.1 IC = 80A 2.8 40A 20A 2.5 2.2 1.9 1.6 1.3 5 6 7 8 9 10 11 12 13 14 15 16 17 VG E - Volts VC E - Volts © 2004 IXYS All rights reserved I C - Amperes V C E (sat)- Normalized I C - Amperes IXGK 50N60B2D1 IXGX 50N60B2D1 Fig. 2. Extended Output Characte ristics @ 25 de g. C 320 VGE = 15V 11V 280 13V 240 200 9V 160 120 7V 80 40 5V 0 0 1 2 3 45 6 7 8 VC E - Volts Fig. 4.


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