IXGR32N90B2D1

Advance Technical Information HiPerFASTTM IGBT IXGR 32N90B2D1 with Fast Diode Electrically Isolated Base V I CES VC25 t CE(sat) fi typ = 900 V = 47 A = 2.9 V = 150 ns Symbol Test Conditions VCES VCGR TJ = 25OC to 150OC TJ = 25OC to 150OC; RGE = 1 MΩ VGES VGEM Continuous Transient IC25 IC110 ICM TC = 25OC TC = 110OC TC = 25OC, 1 ms SSOA (RBSOA) PC VGE= 15 V, TVJ = 125OC, RG = 10 Ω Clamped inductive load: VCL < 600V TC = 25OC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s VISOL FC Weight 50/60Hz, RMS, T= I minute Iisol < 1mA Mounting force Maximum Ratings 900 V 900 V ±20 V ±30 V 47 A 22 A 200 A ICM = 64 A 160 -55 ... +150 150 -55 ... +150 300 W OC OC OC OC 2500 3000 20..120/4.5..26 5 V~ V~ N/lb g Symbol VGE(th) ICES IGES VCE(sat) Test Conditions Characteristic Values (TJ = 25OC unless otherwise specified) min. typ. max. IC = 250 μA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ± 20 V IC = IT, VGE = 15 V, Note 1 TJ = 150OC TJ = 125OC 3.0 5.0 V 300 μA 1.5 mA ±100 nA 2.9 V 2.1 V ISOPLUS247 (IXGR) E153432 G CE G = Gate E = Emitter Features ISOLATED TAB C = Collector y Electrically isolated mounting tab y High frequency IGBT y High current handling capability y MOS Gate turn-on - drive simplicity Applications y PFC circuits y Uninterruptible power supplies (UPS) y Switched-mode and resonant-mode power supplies y AC motor speed control y DC servo and robot drives y DC choppers Advantages y High pow...