IGBT. IXGR50N90B2D1 Datasheet

IXGR50N90B2D1 IGBT. Datasheet pdf. Equivalent


Part IXGR50N90B2D1
Description IGBT
Feature IXGR 50N90B2D1 HiPerFASTTM IGBT with Fast Diode IXGR 50N90B2D1 B2-Class High Speed IGBT with Fast.
Manufacture IXYS
Datasheet
Download IXGR50N90B2D1 Datasheet


IXGR 50N90B2D1 HiPerFASTTM IGBT with Fast Diode IXGR 50N90 IXGR50N90B2D1 Datasheet
Recommendation Recommendation Datasheet IXGR50N90B2D1 Datasheet




IXGR50N90B2D1
IXGR 50N90B2D1
HiPerFASTTM
IGBT with Fast
Diode
IXGR 50N90B2D1
B2-Class High Speed IGBT
with Fast Diode
(Electrically Isolated Back Surface)
VCES
IC25
VCE(sat)
tfi typ
= 900 V
= 40 A
= 2.9 V
= 200 ns
Symbol
Test Conditions
VCES
V
CGR
VGES
VGEM
IC25
IC110
I
F110
I
CM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 110°C (IGBT)
TC = 110°C (diode)
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ 720V
PC TC = 25°C
TJ
T
JM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
VISOL
FC
Weight
50/60 Hz, RMS, t = 1ms
Mounting force (PLUS247)
Maximum Ratings
900 V
900 V
± 20
± 30
V
V
40 A
19 A
22 A
200 A
ICM = 100
A
100
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
2500
20..120 / 4.5..25
ISOPLUS247 5
V
N/lb
g
ISOPLUS247 (IXGR)
E153432
G
C
E
ISOLATED TAB
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
Electrically isolated tab
International standard package outline
High current handling capability
MOS Gate turn-on
Drive simplicity
Rugged NPT structure
UL recognized
Molding epoxies meet UL 94V-0
flammability classification
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
V
GE(th)
IC = 250 μA, VCE = VGE
I
CES
IGES
V
CE(sat)
VCE = VCES
VGE = 0 V
TJ = 150°C
VCE = 0 V, VGE = ± 20 V
IC = ITT,JV=GE1=251°5CV, Note 1, 2
Characteristic Values
Min. Typ. Max.
3.0 5.0 V
50 μA
1 mA
± 100 nA
2.2 2.9 V
Applications
Capacitor discharge & pulser circuits
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
© 2006 IXYS All rights reserved
DS99528(03/06)



IXGR50N90B2D1
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
IC
=
I
T
;
VCE
=
10
V,
Note
1,
2
Cies
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
Q
ge
IC =
I
T
,
VGE
=
15
V,
VCE
=
0.5
VCES
Q
gc
t
d(on)
t
ri
t
d(off)
tfi
Eoff
Inductive load
IC =
VCE
=IT,7V20GEV=,
15 V
RG =
Roff
=
5
Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 125°C
IC =
I,
T
VGE
=
15
V
VCE = 720 V, RG = Roff = 5 Ω,
Note 2
RthJC
RthCH
Diode
Symbol
Conditions
(TJ = 25°C unless otherwise specified )
VF
IF = 30 A; Note 1
TVJ = 150°C
IRM
trr
IVFR==IT1, 0d0iF/Vd;t
= -100
VGE = 0
A/μs;
V
TVJ
=
100°C
RthJC
RthCH
with heat transfer paste
Note 1: Pulse test, t 300 μs, duty cycle 2 %
Note 2: Test Current IT = 50A
Characteristic Values
Min. Typ. Max.
25 40
S
2500
180
75
pF
pF
pF
135 nC
23 nC
50 nC
20 ns
28 ns
350 500 ns
200 ns
4.7 7.5 mJ
20 ns
28 ns
1.5 mJ
400 ns
420 ns
8.7 mJ
1.25 K/W
0.21 K/W
IXGR 50N90B2D1
ISOPLUS247 Outline
Characteristic Values
Min. Typ. Max.
2.5 2.75 V
1.8 V
5.5 11.5 A
200 ns
1.1 K/W
0.25 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by4,835,592 4,931,844 5,049,961 5,237,481 6,162,665
6,404,065 B1 6,683,344 6,727,585
one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343
6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505
6,710,463 6771478 B2







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