IGBT. IXGT32N90B2D1 Datasheet

IXGT32N90B2D1 IGBT. Datasheet pdf. Equivalent

Part IXGT32N90B2D1
Description IGBT
Feature Advance Technical Information HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultra.
Manufacture IXYS
Datasheet
Download IXGT32N90B2D1 Datasheet

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IXGT32N90B2D1
Advance Technical Information
HiPerFASTTM IGBT
with Fast Diode
B2-Class
High Speed IGBTs with
Ultrafast Diode
IXGH 32N90B2D1
IXGT 32N90B2D1
V
I CES
VC25
t CE(sat)
fi typ
= 900 V
= 64 A
= 2.7 V
= 150 ns
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
IC25
IC110
ICM
SSOA
(RBSOA)
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load: VCL < 600V
PC TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weight
Mounting torque (TO-247)
Maximum Ratings
900 V
900 V
±20 V
±30 V
64 A
32 A
200 A
ICM = 64
A
300
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
TO-247
TO-268
1.13/10 Nm/lb.in.
6g
4g
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 mA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ± 20 V
IC = IC110, VGE = 15 V
Characteristic Values
(TJ
=
25°C
unless otherwise specified)
min. typ. max.
3.0 5.0 V
TJ = 150°C
TJ = 125°C
300 μA
1.5 mA
± 100 nA
2.2 2.7 V
2.1 V
TO-247 (IXGH)
G
CE
TO-268 (IXGT)
G
E
C (TAB)
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
High frequency IGBT
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
High power density
Very fast switching speeds for high
frequency applications
© 2005 IXYS All rights reserved
DS99392(12/05)



IXGT32N90B2D1
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C
unless
Min.
otherwise specified)
Typ. Max.
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCS
IC = IC110 , VCE = 10 V
Pulse test, t < 300 μs, duty cycle < 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC110 , VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC110 , VGE = 15 V
VCE = 720 V, RG = Roff = 5 Ω
Inductive load, TJ = 125°C
IC = IC110 A, VGE = 15 V
VCE = 720 V, RG = Roff = 5 Ω
(TO-247)
18 28
S
1790
146
49
pF
pF
pF
89 nC
15 nC
34 nC
20 ns
22 ns
260 400 ns
150 ns
2.2 4.5 mJ
20
22
3.8
360
330
5.75
ns
ns
mJ
ns
ns
mJ
0.42 K/W
0.25
K/W
IXGH 32N90B2D1
IXGT 32N90B2D1
TO-247 AD Outline
P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Ultrafast Diode
Symbol
IF110
Conditions
TC = 110°C
Maximum Ratings
27 A
Symbol
Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
VF IF = 30 A;
TVJ = 125°C
2.75
1.9
V
V
ItRrrM
IF = 50 A; diF/dt = -100 A/μs; TVJ = 100°C
VR = 100 V; VGE = 0 V
5.5 11.4 A
190 ns
RthJC
RthCS
0.9 K/W
0.25
K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2





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