IGBT. IXGH30N60B2D1 Datasheet

IXGH30N60B2D1 IGBT. Datasheet pdf. Equivalent

Part IXGH30N60B2D1
Description IGBT
Feature Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz re.
Manufacture IXYS
Datasheet
Download IXGH30N60B2D1 Datasheet

Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 IXGH30N60B2D1 Datasheet
Recommendation Recommendation Datasheet IXGH30N60B2D1 Datasheet




IXGH30N60B2D1
Advance Technical Data
HiPerFASTTM IGBT
Optimized for 10-25 KHz hard
switching and up to 150 KHz
resonant switching
IXGH 30N60B2D1
IXGT 30N60B2D1
VCES
IC25
VCE(sat)
tfi typ
= 600 V
= 70 A
< 1.8 V
= 82 ns
Symbol
Test Conditions
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
VGES
VGEM
Continuous
Transient
IC25 TC = 25°C (limited by leads)
IC110
TC = 110°C
ICM TC = 25°C, 1 ms
SSOA
(RBSOA)
PC
VGE = 15 V, TVJ = 125°C, RG = 10
Clamped inductive load @ 600 V
TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weight
Mounting torque (M3) (TO-247)
TO-247
TO-268
Maximum Ratings
600 V
600 V
±20 V
±30 V
70 A
30 A
150 A
ICM = 60
A
190
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
1.13/10Nm/lb.in.
6g
4g
Symbol
Test Conditions
VGE(th)
ICES
IGES
VCE(sat)
IC = 250 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 24 A, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
2.5 5.0 V
TJ = 25°C
TJ = 150°C
TJ = 25°C
200 µA
3 mA
±100 nA
1.8 V
TO-247 AD (IXGH)
G
CE
TO-268 (IXGT)
C (TAB)
G
E
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z Medium frequency IGBT
z Square RBSOA
z High current handling capability
z MOS Gate turn-on
- drive simplicity
Applications
z PFC circuits
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z AC motor speed control
z DC servo and robot drives
z DC choppers
© 2004 IXYS All rights reserved
DS99134A(04/04)



IXGH30N60B2D1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
IC = 24 A; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 24 A, VGE = 15 V, VCE = 300 V
Inductive load, TJ = 25°C
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5
Inductive load, TJ = 125°C
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5
(TO-247)
18 26
S
1500
145
40
pF
pF
pF
66 nC
9 nC
22 nC
13
15
110
82
0.32
ns
ns
200 ns
150 ns
0.6 mJ
13
17
0.22
200
150
0.9
ns
ns
mJ
ns
ns
mJ
0.65 K/W
0.25
K/W
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IF = 30 A, VGE = 0 V, Pulse test
TJ =150°C
1.6 V
t 300 µs, duty cycle d 2 %
2.5 V
IRM
trr
RthJC
IF = 30 A, VGE = 0 V, -diF/dt =100 A/µs, TJ = 100°C
VR = 100 V
TJ = 100°C 100
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V
25
4A
ns
ns
0.9 K/W
IXGH 30N60B2D1
IXGT 30N60B2D1
TO-247 AD Outline
P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505





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