Inverter Module. MIAA10WB600TMH Datasheet

MIAA10WB600TMH Module. Datasheet pdf. Equivalent


Part MIAA10WB600TMH
Description Converter - Brake - Inverter Module
Feature Advanced Technical Information MIAA10WB600TMH Converter - Brake - Inverter Module NPT IGBT Single.
Manufacture IXYS
Datasheet
Download MIAA10WB600TMH Datasheet


Advanced Technical Information MIAA10WB600TMH Converter - MIAA10WB600TMH Datasheet
Recommendation Recommendation Datasheet MIAA10WB600TMH Datasheet




MIAA10WB600TMH
Advanced Technical Information
MIAA10WB600TMH
Converter - Brake - Inverter
Module
NPT IGBT
Single Phase
Brake
Three Phase
Rectifier
Chopper
Inverter
VRRM = 1600 V VCES = 600 V VCES = 600 V
IDAVM25 = 90 A IC25 = 18 A IC25 = 18 A
IFSM = 270 A VCE(sat) = 2.1 V VCE(sat) = 2.1 V
Part name (Marking on product)
MIAA10WB600TMH
P P1
D8 D10 D12
L1
L2
L3
D9 D11 D13
NTC1
D7
NTC2
T7
GB
T1
G1
T3
D1
G3
B
T2
G2
U
T4
D2
G4
T5
D3
G5
V
T6
D4
G6
D5
W
D6
N NB EU
EV EW
E 72873
Pin configuration see outlines.
Features:
• High level of integration - only one
power semiconductor module required
for the whole drive
• Inverter with NPT IGBTs
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current
• Epitaxial free wheeling diodes with
hiperfast soft reverse recovery
• Temperature sense included
Application:
• AC motor drives
• Pumps, Fans
• Washing machines
• Air-conditioning system
• Inverter and power supplies
Package:
• "Mini" package
• Assembly height is 17 mm
• Insulated base plate
• Pins suitable for wave soldering and
PCB mounting
• Assembly clips available
- IXKU 5-505 screw clamp
- IXRB 5-506 click clamp
• UL registered E72873
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20070404a
-8



MIAA10WB600TMH
Advanced Technical Information
MIAA10WB600TMH
Ouput Inverter T1 - T6
Symbol
VCES
VGES
VGEM
IC25
IC80
Ptot
VCE(sat)
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
VGE(th)
ICES
gate emitter threshold voltage
collector emitter leakage current
IGES
Cies
QG(on)
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
RBSOA
ISC
(SCSOA)
RthJC
RthCH
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
continuous
transient
TVJ = 150°C
TC = 25°C
TC = 80°C
TC = 25°C
IC = 10 A; VGE = 15 V
TVJ = 25°C
TVJ = 125°C
IC = 0.35 A; VGE = VCE
TVJ = 25°C
VCE = VCES; VGE = 0 V
TVJ = 25°C
TVJ = 125°C
VGE = ±20 V
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 300 V; VGE = 15 V; IC = 10 A
inductive load
VCE = 300 V; IC = 10 A
VGE = ±15 V; RG = 82 W
TVJ = 25°C
inductive load
VCE = 300 V; IC = 10 A
VGE = ±15 V; RG = 82 W
TVJ = 125°C
VGE = ±15 V; RG = 82 W; IC = 20 A TVJ = 125°C
VCE = 360 V; VGE = ±15 V;
TVJ = 125°C
RG = 82 W; tp = 10 µs; non-repetitive
(per IGBT)
Ratings
min. typ. max.
600
±20
±30
18
13
70
2.1 2.6
2.3
4.5 5.5 6.5
0.6
0.8
150
450
50
32
35
180
110
0.17
0.2
32
35
190
170
0.27
0.42
VCEK < VCES-LS·dI /dt
40
1.8
0.6
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
pF
nC
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
V
A
K/W
K/W
Output Inverter D1 - D6
Symbol
VRRM
IF25
IF80
VF
Definitions
max. repetitve reverse voltage
forward current
forward voltage
Qrr
IRM
trr
Erec
RthJC
RthCH
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
IF = 10 A; VGE = 0 V
VR = 300 V
diF /dt = -300 A/µs
IF = 10 A; VGE = 0 V
(per diode)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
Ratings
min. typ. max. Unit
TVJ = 150°C
TC = 25°C
TC = 80°C
TVJ = 25°C
TVJ = 125°C
TVJ = 125°C
600 V
22 A
14 A
1.7 2.2
1.4
V
V
0.3 µC
8.8 A
95 ns
22 µJ
2.5 K/W
0.85 K/W
TC = 25°C unless otherwise stated
20070404a
-8







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