INTEGRATED CIRCUITS. AH6851 Datasheet

AH6851 CIRCUITS. Datasheet pdf. Equivalent

Part AH6851
Description HALL-EFFECT SWITCH INTEGRATED CIRCUITS
Feature NANJING AH ELECTRONIC CO., LTD AH6851 HALL-EFFECT SWITCH INTEGRATED CIRCUITS These Hall-effect swi.
Manufacture NANJING AH ELECTRONIC
Datasheet
Download AH6851 Datasheet

NANJING AH ELECTRONIC CO., LTD AH6851 HALL-EFFECT SWITCH IN AH6851 Datasheet
Recommendation Recommendation Datasheet AH6851 Datasheet




AH6851
NANJING AH ELECTRONIC CO., LTD
AH6851 HALL-EFFECT SWITCH INTEGRATED CIRCUITS
These Hall-effect switch integrated circuits are monolithic integrated circuit consisting of a voltage regulator,
Hall-voltage generator, differential amplifier, schmitt trigger, temperature compensation circuit and open-collector
output stage. Its input is a magnetic flux density signal and output is a digital voltage signal.
FEATURES
. Wide supply voltage range
. Fast response time
. Wide frequency and temperature range
. Long operating life
. Small size, convenient installing
. Output compatible with all digital logic families
TYPICAL APPLICATIONS
. Contactless switch
. Position control
. Speed measurement
. Revolution detection
. Isolation measurement . Brushless DC motor
. Automotive ignitor
ABSOLUTE MAXIMUM RATING
Parameter
Symbol
Supply voltage
VCC
Magnetic flux density
B
Output OFF voltage
Vce
Continuous output current
IOL
Operating temperature range TA
Storage temperature range
TS
Value
24
Unlimited
50
50
-40~125
-55~150
Unit
V
mT
V
mA
ELECTRICAL CHARACTERISTICS
TA=25
Parameter
Symbol
Test conditions
Supply voltage
Output saturation voltage
Output leakage current
Supply current
Output rise time
Output fall time
VCC
VOL Iout=20mA B>BBOP
IOH Vout=24V B<BBRP
ICC VCC=Output open
tr RL=820Ω CL=20PF
tf RL=820Ω CL=20PF
Type and Value
min typ max
4.5 - 24
- 200 400
- 0.1 10
- - 10
- 0.12 -
- 0.18 -
Unit
V
mV
μA
mA
μS
μS
1 AH6851 HALL SWITCH



AH6851
HALL SENSORS
MAGNET CHARACTERISTICS
VCC=4.524V
Parameter
Symbol
Type and Value
min typ max
Unit
Operate point
BOP
10.0 mT
Release point
BRP
-10.0
mT
Hysteresis
NOTE: 1mT=10GS
BH
2
- mT
BLOCK DIAGRAM
1,Vcc
REG
RL
3, Vo
MAGNETIC-ELECTRICAL
TRANSFER CHARACTERISTICS
2, GND
DIMENSIONS ( in: mm)
4.5± 0.1
2.0± 0.1
1.0
2.26 0.64 作用Active Area Depth
0.43
0.38
1.27
2.34
标志Branded Surface
0.38
1 23
1. Vcc 2. GND 3. OUTPUT
TO –92T Package and Active Area
Cautions
1. When install, should as full
as possible decrease the
mechanical stress acting on the
Hall IC, to avoid the influence
of the operate point and
release point.
2. On the premise of ensuring
welding quality, use as possible
as low welding temperature as
short time.
ADD: ROOM 901,CNK INTERNATIONAL MANSION, NO.198, HONG WU R2OAD,NANJING, P.R.CHINA AH6851 HALL SWITCH
TEL: 0086-25-84609021
FAX: 0086-25-84670370
WEBSITE: WWW.AHEST.COM
E-MAIL: nianrong@ahest.com





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)