Inverter Module. MUBW75-06A8 Datasheet

MUBW75-06A8 Module. Datasheet pdf. Equivalent

Part MUBW75-06A8
Description Converter - Brake - Inverter Module
Feature MUBW 75-06 A8 Converter - Brake - Inverter Module (CBI3) 21 22 D11 D13 D15 12 3 D7 7 D12 D14 D1.
Manufacture IXYS
Datasheet
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MUBW 75-06 A8 Converter - Brake - Inverter Module (CBI3) 2 MUBW75-06A8 Datasheet
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MUBW75-06A8
MUBW 75-06 A8
Converter - Brake - Inverter Module (CBI3)
21 22
D11 D13 D15
12 3
D7
7
D12 D14 D16
23
T7
14
24
T1
16
15
T2
11
10
D1 T3
18
6 17
D2 T4
12
D3 T5
20
19
5
D4 T6
13
D5
4
D6 E72873
See outline drawing for pin arrangement
Preliminary data
NTC
8
Three Phase
Rectifier
VRRM = 1600 V
IFAVM = 70 A
IFSM = 700 A
Brake Chopper
VCES = 600 V
IC25 = 50 A
VCE(sat) = 2.0 V
Three Phase
Inverter
VCES = 600 V
IC25 = 100 A
VCE(sat) = 2.0 V
9
Input Rectifier D11 - D16
Symbol
VRRM
IFAV
IDAVM
IFSM
Ptot
Conditions
TC = 80°C; sine 180°
TC = 80°C; rectangular; d = 1/3; bridge
TVJ = 25°C; t = 10 ms; sine 50 Hz
TC = 25°C
Maximum Ratings
1600
V
50 A
140 A
700 A
135 W
Symbol
Conditions
VF
I
R
RthJC
IF = 75 A; TVJ = 25°C
TVJ = 125°C
V
R
=
V;
RRM
TVJ
=
25°C
TVJ = 125°C
(per diode)
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
1.2 1.4 V
1.2 V
0.05 mA
0.8 mA
0.94 K/W
Application: AC motor drives with
Input from single or three phase grid
Three phase synchronous or
asynchronous motor
electric braking operation
Features
High level of integration - only one power
semiconductor module required for the
whole drive
NPT IGBT technology with low
saturation voltage, low switching
losses, high RBSOA and short circuit
ruggedness
Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
Industry standard package with insulated
copper base plate and soldering pins for
PCB mounting
Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
20070912a
1-4



MUBW75-06A8
MUBW 75-06 A8
Output Inverter T1 - T6
Symbol
VCES
VGES
IC25
IC80
RBSOA
tSC
(SCSOA)
Ptot
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
Continuous
600 V
± 20 V
TC = 25°C
TC = 80°C
100
65
VGE = ±15 V; RG = 15 Ω; TVJ = 125°C
Clamped inductive load; L = 100 µH
ICM = 150
VCEK VCES
VCE = VCES; VGE = ±15 V; RG = 15 Ω; TVJ = 125°C
non-repetitive
10
A
A
A
µs
TC = 25°C
320 W
Symbol
VCE(sat)
VGE(th)
ICES
I
GES
td(on)
tr
t
d(off)
tf
E
on
Eoff
Cies
Q
Gon
RthJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 75 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
IC = 1.5 mA; VGE = VCE
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
V = 0 V; V = ± 20 V
CE GE
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 75 A
VGE = ±15 V; RG = 15 Ω
2.0 2.5 V
2.3 V
4.5 6.5 V
1.4 mA
1.5 mA
200 nA
150 ns
60 ns
450 ns
40 ns
4.0 mJ
3.3 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
V = 300V; V = 15 V; I = 100 A
CE GE C
(per IGBT)
4.2 nF
260 nC
0.39 K/W
Output Inverter D1 - D6
Symbol
IF25
IF80
Conditions
TC = 25°C
TC = 80°C
Maximum Ratings
140 A
85 A
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at VGE = 15 V; TJ = 125°C)
T1-T6
V0 = 1.21 V; R0 = 15 mΩ
T7
V0 = 1.06 V; R0 = 36 mΩ
Diode (typ. at TJ = 125°C)
D1-D6
V0 = 1.1 V; R0 = 2 mΩ
D7
V0 = 1.1 V; R0 = 12 mΩ
D11-D16
V0 = 0.85 V; R0 = 5 mΩ
Thermal Response
IGBT (typ.)
T1-T6
Cth1 = 0.177 J/K; Rth1 = 0.293 K/W
Cth2 = 1.228 J/K; Rth2 = 0.097 K/W
T7
Cth1 = 0.088 J/K; Rth1 = 0.583 K/W
Cth2 = 0.799 J/K; Rth2 = 0.167 K/W
Diode (typ.)
D1-D6
Cth1 = 0.138 J/K; Rth1 = 0.48 K/W
Cth2 = 0.957 J/K; Rth2 = 0.13 K/W
D7
Cth1 = 0.038 J/K; Rth1 = 1.725 K/W
Cth2 = 0.439 J/K; Rth2 = 0.375 K/W
D11-D16
Cth1 = 0.086 J/K; Rth1 = 0.738 K/W
Cth2 = 0.621 J/K; Rth2 = 0.202 K/W
Symbol
VF
I
RM
trr
RthJC
Conditions
IF = 75 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
I
F
=
60
A;
di /dt
F
=
-500
A/µs;
TVJ
=
125°C
VR = 300 V; VGE = 0 V
(per diode)
Characteristic Values
min. typ. max.
1.7 2.0 V
1.2 V
28 A
100 ns
0.61 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
20070912a
2-4





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