Inverter Module. MUBW50-12E8 Datasheet

MUBW50-12E8 Module. Datasheet pdf. Equivalent

Part MUBW50-12E8
Description Converter - Brake - Inverter Module
Feature MUBW 50-12 E8 Converter - Brake - Inverter Module (CBI3) 21 22 D11 D13 D15 12 3 D7 7 D12 D14 D1.
Manufacture IXYS
Datasheet
Download MUBW50-12E8 Datasheet

MUBW 50-12 E8 Converter - Brake - Inverter Module (CBI3) 2 MUBW50-12E8 Datasheet
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MUBW50-12E8
MUBW 50-12 E8
Converter - Brake - Inverter Module (CBI3)
21 22
D11 D13 D15
12 3
D7
7
D12 D14 D16
23
T7
14
24
T1
16
15
T2
11
10
D1 T3
18
6 17
D2 T4
12
D3 T5
20
19
5
D4 T6
13
D5
4
D6 E72873
See outline drawing for pin arrangement
NTC
8
Three Phase
Rectifier
VRRM = 1600 V
I = 70 A
FAVM
IFSM = 700 A
Brake Chopper
VCES = 1200 V
I = 52 A
C25
VCE(sat)= 2.2 V
Three Phase
Inverter
VCES = 1200 V
I = 90 A
C25
VCE(sat)= 1.9 V
9
Input Rectifier Bridge D11 - D16
Symbol
VRRM
IFAV
IDAVM
IFSM
Ptot
Conditions
TC = 80°C; sine 180°
TC = 80°C; rectangular; d = 1/3; bridge
TVJ = 25°C; t = 10 ms; sine 50 Hz
TC = 25°C
Maximum Ratings
1600
V
50 A
140 A
700 A
135 W
Symbol
Conditions
VF
I
R
RthJC
IF = 50 A; TVJ = 25°C
TVJ = 125°C
V
R
=
V;
RRM
TVJ
=
25°C
TVJ = 125°C
(per diode)
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
1.1 1.3 V
1.1 V
0.05 mA
0.8 mA
0.94 K/W
Application: AC motor drives with
• Input from single or three phase grid
• Three phase synchronous or
asynchronous motor
• electric braking operation
Features
• High level of integration - only one
power semiconductor module
required for the whole drive
• IGBT technology with low saturation
voltage, low switching losses and tail
current, high RBSOA and short circuit
ruggedness
• Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
• Industry standard package with
insulated copper base plate and
soldering pins for PCB mounting
• Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20070912a
1-8



MUBW50-12E8
MUBW 50-12 E8
Output Inverter T1 - T6
Symbol
VCES
VGES
IC25
IC80
ICM
VCEK
tSC
(SCSOA)
Ptot
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
Continuous
1200
± 20
V
V
TC = 25°C
TC = 80°C
VGE = ±15 V; RG = 22 Ω; TVJ = 125°C
RBSOA; Clamped inductive load; L = 100 µH
VCE = 900 V; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C
non-repetitive
90
62
100
VCES
10
A
A
A
µs
TC = 25°C
350 W
Symbol
VCE(sat)
VGE(th)
ICES
I
GES
td(on)
tr
t
d(off)
tf
E
on
Eoff
Cies
Q
Gon
RthJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 50 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
IC = 2 mA; VGE = VCE
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
V = 0 V; V = ± 20 V
CE GE
Inductive load, TVJ = 125°C
V = 600 V; I = 50 A
CE C
VGE = ±15 V; RG = 22 Ω
1.9 2.4 V
2.1 V
4.5 6.5 V
0.8 mA
0.8 mA
200 nA
80 ns
50 ns
680 ns
30 ns
6 mJ
4 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
V = 600 V; V = 15 V; I = 50 A
CE GE C
(per IGBT)
3.8 nF
350 nC
0.35 K/W
Output Inverter D1 - D6
Symbol
IF25
IF80
Conditions
TC = 25°C
TC = 80°C
Maximum Ratings
110 A
70 A
Symbol
VF
I
RM
trr
RthJC
Conditions
IF = 50 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
I
F
=
60
A;
di /dt
F
=
-500
A/µs;
TVJ
=
125°C
VR = 600 V; VGE = 0 V
(per diode)
Characteristic Values
min. typ. max.
2.1 2.5 V
1.5 V
41 A
200 ns
0.61 K/W
© 2007 IXYS All rights reserved
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at VGE = 15 V; TJ = 125°C)
T1-T6
V0 = 0.98 V; R0 = 23.2 mΩ
T7
V0 = 0.95 V; R0 = 45 mΩ
Diode (typ. at TJ = 125°C)
D1-D6
V0 = 1.27 V; R0 = 5.8 mΩ
D7
V0 = 1.25 V; R0 = 31.2 mΩ
D11-D16
V0 = 0.83 V; R0 = 5.5 mΩ
Thermal Response
IGBT (typ.)
T1-T6
Cth1 = 0.206 J/K; Rth1 = 0.262 K/W
Cth2 = 1.307 J/K; Rth2 = 0.088 K/W
T7
Cth1 = 0.128 J/K; Rth1 = 0.421 K/W
Cth2 = 0.961 J/K; Rth2 = 0.129 K/W
Diode (typ.)
D1-D6
Cth1 = 0.138 J/K; Rth1 = 0.48 K/W
Cth2 = 0.957 J/K; Rth2 = 0.13 K/W
D7
Cth1 = 0.038 J/K; Rth1 = 1.74 K/W
Cth2 = 0.435 J/K; Rth2 = 0.36 K/W
D11-D16
Cth1 = 0.086 J/K; Rth1 = 0.738 K/W
Cth2 = 0.621 J/K; Rth2 = 0.202 K/W
20070912a
2-8





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