Inverter Module. MUBW50-12T8 Datasheet

MUBW50-12T8 Module. Datasheet pdf. Equivalent

Part MUBW50-12T8
Description Converter - Brake - Inverter Module
Feature Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology NTC 8 9 21 22 D11 D13 D15 7.
Manufacture IXYS
Datasheet
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Converter - Brake - Inverter Module (CBI3) with Trench IGBT MUBW50-12T8 Datasheet
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MUBW50-12T8
Converter - Brake - Inverter Module (CBI3)
with Trench IGBT technology
NTC
8
9
21 22
D11 D13 D15
7
D7 T1
16
15
12 3
T7
D12 D14 D16 14
T2
11
10
23 24
D1 T3
18
17
6
T4
D2 12
D3 T5
20
19
5
T6
D4 13
D5
4
D6
Three Phase
Rectifier
VRRM = 1600 V
IFAVM = 50 A
IFSM = 850 A
Brake
Chopper
VCES = 1200 V
IC25 = 55 A
VCE(sat) = 1.7 V
Three Phase
Inverter
VCES = 1200 V
IC25 = 80 A
VCE(sat) = 1.7 V
MUBW 50-12 T8
Input Rectifier Bridge D11 - D16
Symbol Conditions
VRRM
IFAV
IDAVM
IFSM
Ptot
TC = 80°C; sine 180°
TC = 80°C; rectangular; d = 1/3; bridge
TC = 25°C; t = 10 ms; sine 50 Hz
TC = 25°C
Maximum Ratings
1600
V
50 A
140 A
850 A
125 W
Symbol
VF
IR
RthJC
Conditions
IF = 50 A;
VR = VRRM;
(per diode)
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
1.15 1.3
1.05
V
V
0.05 mA
0.8 mA
1.0 K/W
Application: AC motor drives with
• Input from single or three phase grid
• Three phase synchronous or
asynchronous motor
• electric braking operation
Features
• High level of integration - only one
power semiconductor module
required for the whole drive
• IGBT technology with low saturation
voltage, low switching losses and tail
current, high RBSOA and short circuit
ruggedness
• Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
• Industry standard package with
insulated copper base plate and
soldering pins for PCB mounting
• Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
-7



MUBW50-12T8
Output Inverter T1 - T6
Symbol Conditions
VCES
VGES
IC25
IC80
ICM
Ptot
TVJ = 25°C to 150°C
Continuous
TC = 25°C
TC = 80°C
TC = 80°C; tp = 1 ms
TC = 25°C
Maximum Ratings
1200
V
± 20 V
80 A
50 A
100 A
270 W
Symbol Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat)
VGE(th)
ICES
IGES
Cies
QGon
td(on)
tr
td(off)
tf
Eon
Eoff
RBSOA
tSC
(SCSOA)
RthJC
IC = 50 A; VGE = 15 V
IC = 2 mA; VGE = VCE
VCE = VCES; VGE = 0 V
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 50 A
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 50 A
VGE = ±15 V; RG = 18
IC = ICM; VGE = 15 V
RG = 18 ; TVJ = 125°C
VCE = 720 V; VGE = ±15 V; RG = 18
tP < 10 µs; non-repetitive; TVJ = 125°C
1.7 2.15
2.0
5 5.8 6.5
2.7
0.7
400
3.5
470
90
50
520
90
5
6.5
VCEK < VCES - LS di/dt
V
V
V
mA
mA
nA
nF
nC
ns
ns
ns
ns
mJ
mJ
V
200 A
0.46 K/W
Output Inverter D1 - D6
Symbol Conditions
IF25 TC = 25°C
IF80 TC = 80°C
Symbol Conditions
VF
IRM
Qrr
trr
Erec
RthJC
IF = 50 A;
TVJ = 25°C
TVJ = 125°C
IF = 60 A; diF /dt = -1200 A/µs;
TVJ = 125°C; VR = 600 V; VGE = 0 V
(per diode)
Maximum Ratings
100 A
50 A
Characteristic Values
min. typ. max.
2.1 2.6
1.6
V
V
90 A
10 µC
160 ns
4 mJ
0.65 K/W
MUBW 50-12 T8
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
-7





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