Inverter Module. MUBW10-06A6K Datasheet

MUBW10-06A6K Module. Datasheet pdf. Equivalent

Part MUBW10-06A6K
Description Converter - Brake - Inverter Module
Feature Converter - Brake - Inverter Module (CBI 1) NPT IGBT Preliminary data Part name (Marking on product).
Manufacture IXYS
Datasheet
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MUBW10-06A6K
Converter - Brake - Inverter
Module (CBI 1)
NPT IGBT
Preliminary data
Part name (Marking on product)
MUBW10-06A6K
MUBW10-06A6K
Three Phase
Rectifier
Brake Three Phase
Chopper
Inverter
VRRM = 1600 V VCES = 600 V VCES = 600 V
IDAVM25 = 90 A IC25 = 12 A IC25 = 52 A
IFSM = 300 A VCE(sat) = 2.5 V VCE(sat) = 2.5 V
E72873
Pin configuration see outlines.
Features:
• High level of integration - only one
power semiconductor module required
for the whole drive
• Inverter with NPT IGBTs
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current
• Epitaxial free wheeling diodes with
hiperfast and soft reverse recovery
• Industry standard package with insu
lated copper base plate and soldering
pins for PCB mounting
• Temperature sense included
Application:
AC motor drives with
• Input from single or three phase grid
• Three phase synchronous or
asynchronous motor
• Electric braking operation
Package:
• UL registered
• Industry standard E1-pack
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
20090929b
1-5



MUBW10-06A6K
MUBW10-06A6K
Ouput Inverter T1 - T6
Symbol
VCES
VGES
VGEM
IC25
IC80
Ptot
VCE(sat)
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
VGE(th)
ICES
gate emitter threshold voltage
collector emitter leakage current
IGES
Cies
QG(on)
td(on)
tr
td(off)
tf
Eon
Eoff
ICM
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
tSC
(SCSOA)
RthJC
RthCH
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
Output Inverter D1 - D6
Symbol
VRRM
IF25
IF80
VF
Definitions
max. repetitve reverse voltage
forward current
forward voltage
IRM
trr
Erec(off)
RthJC
RthCH
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
continuous
transient
TVJ = 25°C to 150°C
IC = 10 A; VGE = 15 V
IC = 0.2 mA; VGE = VCE
VCE = VCES; VGE = 0 V
VCE = 0 V; VGE = ±20 V
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 300 V; VGE = 15 V; IC = 6 A
TC = 25°C
TC = 80°C
TC = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
inductive load
VCE = 300 V; IC = 6 A
VGE = ±15 V; RG = 54 W
TVJ = 125°C
RBSOA; VGE = ±15 V; RG = 54 W
L = 100 µH; clamped induct. load TVJ = 125°C
VCEmax = VCES - LS·di/dt
VCE = 600 V; VGE = ±15 V;
RG = 54 W; non-repetitive
TVJ = 125°C
(per IGBT)
(per IGBT)
min.
4.5
Ratings
typ. max.
600
±20
±30
11
8
50
2.7 3.3
3.1
6.5
65
1.0
120
220
32
20
10
110
30
0.22
0.26
18
Unit
V
V
V
A
A
W
V
V
V
µA
mA
nA
pF
nC
ns
ns
ns
ns
mJ
mJ
A
10 µs
2.75 K/W
0.95 K/W
Conditions
IF = 10 A; VGE = 0 V
VR = 100 V
diF /dt = -100 A/µs
IF = 12 A; VGE = 0 V
(per diode)
(per diode)
TVJ = 150°C
TC = 25°C
TC = 80°C
TVJ = 25°C
TVJ = 125°C
TVJ = 100°C
min.
Ratings
typ. max.
600
21
14
2.2
1.6
4.4
80
tbd
2.5
0.85
Unit
V
A
A
V
V
A
ns
µJ
K/W
K/W
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
20090929b
2-5





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