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IXGK60N60C2D1 Dataheets PDF



Part Number IXGK60N60C2D1
Manufacturers IXYS
Logo IXYS
Description IGBT
Datasheet IXGK60N60C2D1 DatasheetIXGK60N60C2D1 Datasheet (PDF)

HiPerFASTTM IGBT with Diode IXGK 60N60C2D1 IXGX 60N60C2D1 C2-Class High Speed IGBTs V I CES VC25 t CE(sat) fi(typ) = 600 V = 75 A = 2.5 V = 35 ns Symbol Test Conditions VCES VCGR VGES VGEM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient IC25 TC = 25°C (limited by leads) IC110 TC = 110°C IF110 TC = 110°C ICM TC = 25°C, 1 ms SSOA (RBSOA) PC TJ TJM Tstg Md Weight VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C Mounting torque, .

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HiPerFASTTM IGBT with Diode IXGK 60N60C2D1 IXGX 60N60C2D1 C2-Class High Speed IGBTs V I CES VC25 t CE(sat) fi(typ) = 600 V = 75 A = 2.5 V = 35 ns Symbol Test Conditions VCES VCGR VGES VGEM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient IC25 TC = 25°C (limited by leads) IC110 TC = 110°C IF110 TC = 110°C ICM TC = 25°C, 1 ms SSOA (RBSOA) PC TJ TJM Tstg Md Weight VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C Mounting torque, TO-264 TO-264 PLUS247 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 600 V 600 V ±20 V ±30 V 75 A 60 A 48 A 300 A ICM = 100 A 480 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in. 10 g 6g 300 °C Symbol Test Conditions VGE(th) ICES IGES VCE(sat) IC = 250 μA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 50 A, VGE = 15 V Note 1 Characteristic Values (TJ = 25°C unless Min. otherwise specified) Typ. Max. 3.0 5.0 V TJ = 25°C TJ = 125°C 650 μA 5 mA ±100 nA TJ = 25°C TJ = 125°C 2.1 2.5 1.8 V V TO-264 AA (IXGK) G CE PLUS247 (IXGX) (TAB) G = Gate C = Collector E = Emitter Tab = Collector (TAB) Features • Very high frequency IGBT and anti-parallel FRED in one package • Square RBSOA • High current handling capability • MOS Gate turn-on for drive simplicity • Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications • Switch-mode and resonant-mode power supplies • Uninterruptible power supplies (UPS) • DC choppers • AC motor speed control • DC servo and robot drives Advantages • Space savings (two devices in one package) • Easy to mount with 1 screw © 2006 IXYS All rights reserved DS99044B(11/05) Symbol gfs Cies Coes Cres Qg Qge Qgc td(on) Eon tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK Test Conditions Characteristic Values (TJ = 25°C unless otherwise Min. Typ. specified) Max. IC = 50 A; VCE = 10 V, Note 1 40 58 S VCE = 25 V, VGE = 0 V, f = 1 MHz 3900 280 97 pF pF pF IC = 50 A, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2.0 Ω Inductive load, TJ = 125°C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2.0 Ω 146 nC 28 nC 50 nC 18 ns 0.4 mJ 25 ns 95 150 ns 35 ns 0.48 0.8 mJ 18 ns 25 ns 0.9 mJ 130 ns 80 ns 1.2 mJ 0.26 K/W 0.15 K/W IXGK 60N60C2D1 IXGX 60N60C2D1 TO-264 AA Outline Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 5.13 2.89 2.10 1.42 2.69 3.09 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 20.32 2.29 3.17 0.25 20.83 2.59 3.66 6.07 8.38 3.81 1.78 6.04 6.27 8.69 4.32 2.29 6.30 1.57 1.83 PLUS247 Outline Inches Min. Max. .190 .100 .079 .044 .094 .114 .021 .202 .114 .083 .056 .106 .122 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .800 .090 .125 .010 .820 .102 .144 .239 .330 .150 .070 .238 .247 .342 .170 .090 .248 .062 .072 Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless min. otherwise specified) typ. max. VF IF = 60 A, VGE = 0 V, Note 1 TJ = 150°C 2.1 V 1.4 IRM IF = 60 A, VGE = 0 V, -diF/dt = 100 A/μ TJ = 100°C 8.3 A trr VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V 35 ns RthJC Note 1: Pulse test, t ≤ 300 μs, duty cycle ≤ 2 % 0.65 K/W IXYS reserves the right to change limits, test conditions, and dimensions. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 b1 1.91 2.13 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 one or moreof the following U.S. patents: 4,850,072 5,017,508 4,881,106 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 6,710,405B2 6,759,692 6,710,463 6771478 B2 IC - Amperes IC - Amperes 100 90 80 70 60 50 40 30 20 10 0 0 Fig. 1. Output Characteristics @ 25ºC VGE = 15V 13V 11V 9V 7V 5V 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 VCE - Volts 3 100 90 80 70 60 50 40 30 20 10 0 0 Fig. 3. Output Characteristics @ 125ºC VGE = 15V 13V 11V 9V 7V 5V 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 VCE - Volts 3 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 5.0 4.5 TJ = 25ºC 4.0 I C = 100A 50A 3.5 25A 3.0 2.5 2.0 1.5 5 6 7 8 9 10 11 12 13 14 15 VGE - Volts VCE - Volts © 2006 IXYS All rights reserved IC - Amperes VCE(sat) - Normalized IC - Amperes IXGK 60N60C2D1 IXGX 60N60C2D1 Fig. 2. Exteded Output Characteristics @ 25ºC 300 270 VGE = 15V 13V 240 210 11V 180 150 9V 120 90 60 30 7V 0 0 2 4 6 8 10 12 14 VCE - Volts 16 1.8 1.7 1.6 1.


GW19NC60H IXGK60N60C2D1 IXGX60N60C2D1


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