Document
HiPerFASTTM IGBT with Diode
IXGK 60N60C2D1 IXGX 60N60C2D1
C2-Class High Speed IGBTs
V I CES VC25 t CE(sat)
fi(typ)
= 600 V = 75 A = 2.5 V = 35 ns
Symbol
Test Conditions
VCES VCGR
VGES VGEM
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous Transient
IC25 TC = 25°C (limited by leads)
IC110
TC = 110°C
IF110 TC = 110°C
ICM TC = 25°C, 1 ms
SSOA (RBSOA)
PC
TJ TJM Tstg Md Weight
VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C
Mounting torque, TO-264 TO-264 PLUS247
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600 V 600 V
±20 V ±30 V
75 A 60 A 48 A 300 A
ICM = 100
A
480 W
-55 ... +150 150
-55 ... +150
°C °C °C
1.13/10 Nm/lb.in.
10 g 6g
300 °C
Symbol
Test Conditions
VGE(th) ICES
IGES VCE(sat)
IC = 250 μA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 50 A, VGE = 15 V Note 1
Characteristic Values
(TJ
=
25°C
unless Min.
otherwise specified) Typ. Max.
3.0 5.0 V
TJ = 25°C TJ = 125°C
650 μA 5 mA
±100 nA
TJ = 25°C TJ = 125°C
2.1 2.5 1.8
V V
TO-264 AA (IXGK)
G CE
PLUS247 (IXGX)
(TAB)
G = Gate C = Collector E = Emitter Tab = Collector
(TAB)
Features
• Very high frequency IGBT and
anti-parallel FRED in one package
• Square RBSOA • High current handling capability • MOS Gate turn-on for drive simplicity • Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low IRM
Applications
• Switch-mode and resonant-mode
power supplies
• Uninterruptible power supplies (UPS) • DC choppers • AC motor speed control • DC servo and robot drives
Advantages
• Space savings (two devices in one
package)
• Easy to mount with 1 screw
© 2006 IXYS All rights reserved
DS99044B(11/05)
Symbol
gfs
Cies Coes Cres
Qg Qge Qgc td(on) Eon tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff
RthJC RthCK
Test Conditions
Characteristic Values
(TJ
=
25°C
unless otherwise Min. Typ.
specified) Max.
IC = 50 A; VCE = 10 V, Note 1
40 58
S
VCE = 25 V, VGE = 0 V, f = 1 MHz
3900 280 97
pF pF pF
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2.0 Ω
Inductive load, TJ = 125°C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2.0 Ω
146 nC 28 nC 50 nC 18 ns 0.4 mJ 25 ns 95 150 ns 35 ns
0.48 0.8 mJ 18 ns 25 ns 0.9 mJ
130 ns 80 ns 1.2 mJ
0.26 K/W 0.15 K/W
IXGK 60N60C2D1 IXGX 60N60C2D1
TO-264 AA Outline
Dim.
A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
Millimeter Min. Max.
4.82 2.54 2.00
1.12 2.39 2.90
0.53
5.13 2.89 2.10
1.42 2.69 3.09
0.83
25.91 26.16 19.81 19.96
5.46 BSC 0.00 0.25
0.00 20.32
2.29 3.17
0.25 20.83
2.59 3.66
6.07 8.38
3.81 1.78
6.04
6.27 8.69
4.32 2.29
6.30
1.57 1.83
PLUS247 Outline
Inches Min. Max.
.190 .100 .079
.044 .094 .114
.021
.202 .114 .083
.056 .106 .122
.033
1.020 1.030 .780 .786 .215 BSC .000 .010
.000 .800 .090 .125
.010 .820 .102 .144
.239 .330
.150 .070
.238
.247 .342
.170 .090
.248
.062 .072
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless min.
otherwise specified) typ. max.
VF IF = 60 A, VGE = 0 V, Note 1
TJ = 150°C
2.1 V 1.4
IRM IF = 60 A, VGE = 0 V, -diF/dt = 100 A/μ TJ = 100°C 8.3 A
trr
VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
35 ns
RthJC Note 1: Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %
0.65 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
Terminals:
1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
Dim. Millimeter Min. Max.
A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 b1 1.91 2.13 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13
e 5.45 BSC L 19.81 20.32 L1 3.81 4.32
Q 5.59 6.20 R 4.32 4.83
Inches Min. Max.
.190 .205 .090 .100 .075 .085
.045 .055 .075 .084 .115 .123
.024 .031 .819 .840 .620 .635
.215 BSC .780 .800 .150 .170
.220 0.244 .170 .190
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 one or moreof the following U.S. patents: 4,850,072 5,017,508 4,881,106 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344 6,727,585
6,710,405B2 6,759,692
6,710,463
6771478 B2
IC - Amperes
IC - Amperes
100 90 80 70 60 50 40 30 20 10 0 0
Fig. 1. Output Characteristics @ 25ºC
VGE = 15V 13V 11V
9V
7V
5V 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
VCE - Volts
3
100 90 80 70 60 50 40 30 20 10 0 0
Fig. 3. Output Characteristics @ 125ºC
VGE = 15V 13V 11V
9V
7V
5V
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
VCE - Volts
3
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
5.0
4.5 TJ = 25ºC
4.0 I C = 100A 50A
3.5 25A
3.0
2.5
2.0
1.5 5 6 7 8 9 10 11 12 13 14 15
VGE - Volts
VCE - Volts
© 2006 IXYS All rights reserved
IC - Amperes
VCE(sat) - Normalized
IC - Amperes
IXGK 60N60C2D1 IXGX 60N60C2D1
Fig. 2. Exteded Output Characteristics @ 25ºC
300
270 VGE = 15V 13V
240
210 11V
180
150 9V
120
90
60 30 7V
0 0 2 4 6 8 10 12 14
VCE - Volts
16
1.8 1.7 1.6 1.