IXGX60N60C2D1

HiPerFASTTM IGBT with Diode IXGK 60N60C2D1 IXGX 60N60C2D1 C2-Class High Speed IGBTs V I CES VC25 t CE(sat) fi(typ) = 600 V = 75 A = 2.5 V = 35 ns Symbol Test Conditions VCES VCGR VGES VGEM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient IC25 TC = 25°C (limited by leads) IC110 TC = 110°C IF110 TC = 110°C ICM TC = 25°C, 1 ms SSOA (RBSOA) PC TJ TJM Tstg Md Weight VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C Mounting torque, TO-264 TO-264 PLUS247 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 600 V 600 V ±20 V ±30 V 75 A 60 A 48 A 300 A ICM = 100 A 480 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in. 10 g 6g 300 °C Symbol Test Conditions VGE(th) ICES IGES VCE(sat) IC = 250 μA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 50 A, VGE = 15 V Note 1 Characteristic Values (TJ = 25°C unless Min. otherwise specified) Typ. Max. 3.0 5.0 V TJ = 25°C TJ = 125°C 650 μA 5 mA ±100 nA TJ = 25°C TJ = 125°C 2.1 2.5 1.8 V V TO-264 AA (IXGK) G CE PLUS247 (IXGX) (TAB) G = Gate C = Collector E = Emitter Tab = Collector (TAB) Features Very high frequency IGBT and anti-parallel FRED in one package Square RBSOA High current handling capability MOS Gate turn-on for drive simplicity Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications Switch-mode and resonant-mode power supplies Uninterruptibl...