Voltage BIMOSFET. IXBF9N160G Datasheet

IXBF9N160G BIMOSFET. Datasheet pdf. Equivalent

Part IXBF9N160G
Description High Voltage BIMOSFET
Feature High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N1.
Manufacture IXYS
Datasheet
Download IXBF9N160G Datasheet

High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Mon IXBF9N160G Datasheet
Recommendation Recommendation Datasheet IXBF9N160G Datasheet




IXBF9N160G
High Voltage
BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM
Monolithic Bipolar MOS Transistor
IXBF 9N160 G
IC25 = 7 A
VCES = 1600 V
VCE(sat) = 4.9 V
tf = 70 ans
1
5
IGBT
Symbol
VCES
VGES
IC25
IC90
ICM
VCEK
Ptot
Symbol
VCE(sat)
V
GE(th)
ICES
IGES
t
d(on)
tr
td(off)
tf
Cies
Q
Gon
V
F
RthJC
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 90°C
VGE
=
10/0
V;
R
G
=
27
Ω;
TVJ
=
125°C
RBSOA, Clamped inductive load; L = 100 µH
TC = 25°C
Maximum Ratings
1600 V
± 20 V
7A
4A
12
0.8·VCES
70
A
W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 5 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
I = 0.5 mA; V = V
C GE CE
VCE = 0.8VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 960 V; IC = 5 A
VGE = 10/0 V; RG = 27 Ω
4.9 7 V
5.6 V
3.5 5.5 V
0.1 mA
0.1 mA
500 nA
140 ns
200 ns
120 ns
70 ns
VCE = 25 V; VGE = 0 V; f = 1 MHz
V = 600V; V = 10 V; I = 5 A
CE GE C
(reverse conduction); I = 5 A
F
550 pF
34 nC
3.6 V
1.75 K/W
Features
• High Voltage BIMOSFETTM
- substitute for high voltage MOSFETs
with significantly lower voltage drop
- MOSFET compatible control
10 V turn on gate voltage
- fast switching for high frequency
operation
- reverse conduction capability
• ISOPLUS i4-PACTM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
• switched mode power supplies
• DC-DC converters
• resonant converters
• lamp ballasts
• laser generators, x ray generators
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
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IXBF9N160G
Component
Symbol
TVJ
Tstg
VISOL
FC
Conditions
IISOL 1 mA; 50/60 Hz
mounting force with clip
Symbol
Conditions
dS,dA
dS,dA
RthCH
Weight
pin 2 - pin 5
pin - backside metal
with heatsink compound
IXBF 9N160 G
Maximum Ratings
-55...+150
-55...+125
°C
°C
2500
V~
20...120
N
Dimensions in mm (1 mm = 0.0394")
Characteristic Values
min. typ. max.
7 mm
5.5 mm
0.15
K/W
9g
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
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