High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM
Monolithic Bipolar MOS Transistor
IXBF 9N160 G
IC25 = 7 A VCES...
High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM
Monolithic Bipolar MOS
Transistor
IXBF 9N160 G
IC25 = 7 A VCES = 1600 V VCE(sat) = 4.9 V tf = 70 ans
1 5
IGBT
Symbol VCES VGES IC25 IC90 ICM VCEK Ptot
Symbol
VCE(sat)
V GE(th)
ICES
IGES t
d(on)
tr td(off) tf Cies Q
Gon
V F
RthJC
Conditions TVJ = 25°C to 150°C
TC = 25°C TC = 90°C
VGE
=
10/0
V;
R G
=
27
Ω;
TVJ
=
125°C
RBSOA, Clamped inductive load; L = 100 µH
TC = 25°C
Maximum Ratings
1600 V ± 20 V
7A 4A
12 0.8·VCES
70
A W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified) min. typ. max.
IC = 5 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C
I = 0.5 mA; V = V
C GE CE
VCE = 0.8VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C VCE = 960 V; IC = 5 A VGE = 10/0 V; RG = 27 Ω
4.9 7 V 5.6 V
3.5 5.5 V
0.1 mA 0.1 mA
500 nA
140 ns 200 ns 120 ns
70 ns
VCE = 25 V; VGE = 0 V; f = 1 MHz V = 600V; V = 10 V; I = 5 A
CE GE C
(reverse conduction); I = 5 A F
550 pF 34 nC
3.6 V
1.75 K/W
Features
High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - MOSFET compatible control 10 V turn on gate voltage - fast switching for high frequency operation - reverse conduction capability
ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline
Applications
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