High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM
Monolithic Bipolar MOS Transistor
IXBF 40N160
IC25 = 28 A VCES...
High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM
Monolithic Bipolar MOS
Transistor
IXBF 40N160
IC25 = 28 A VCES = 1600 V VCE(sat) = 6.2 V tf = 40 ns
1 5
IGBT
Symbol VCES VGES IC25 IC90 ICM VCEK Ptot
Symbol
V CE(sat)
VGE(th) ICES
IGES td(on) t
r
td(off) tf C
ies
QGon VF RthJC
Conditions TVJ = 25°C to 150°C
TC = 25°C TC = 90°C VGE = 15/0 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C
Maximum Ratings
1600 ± 20
V V
28 A 16 A
40 0.8VCES
250
A W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified) min. typ. max.
I
C
=
20
A;
V GE
=
15
V;
TVJ
=
25°C
TVJ = 125°C
IC = 2 mA; VGE = VCE
VCE = 0.8VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 960 V; IC = 25 A
V GE
=
15/0
V;
R G
=
22
Ω
6.2 7.1 V 6.9 V
4 8V
0.4 mA 0.8 mA
500 nA
200 ns 60 ns
300 ns 40 ns
V = 25 V; V = 0 V; f = 1 MHz CE GE
VCE = 600V; VGE = 15 V; IC = 20 A
(reverse conduction); IF = 20A
3300 130
2.5
pF nC
V
0.5 K/W
Features
High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability
ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline
Applications
switched mode power supplies DC-DC conver...