IXBT6N170

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = IC90 = VCE(sat) ≤ 1700V 6A 3.4V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 24Ω Clamped inductive load TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247) TO-247 TO-268 Maximum Ratings 1700 1700 V V ± 20 ± 30 V V 12 A 6A 36 A ICM = 16 VCES ≤ 1350 75 A V W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 1.13/10 °C °C Nm/lb.in. 6g 4g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES IC = 250μA, VCE = VGE VGE(th) sICES IGES VCE(sat) IC = 250μA, VCE = VGE VCE = 0.8 VCES VGE = 0V TJ = 125°C VCE = 0V, VGE = ±20V IC = 6A, VGE = 15V, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 1700 V 2.5 5.5 V 10 μA 100 μA ±100 nA 2.84 3.40 3.46 V V TO-247 (IXBH) G CE TO-268 (IXBT) C (TAB) GE C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Features z High blocking voltage z Integrated Anti-parallel diode z International standard packages z Low conduction losses Advantages z Low gate drive requirement z High power density Applications: z Switched-mode and resonant-mode power supplies z Uninterruptible power supplies (UPS) z Laser generator z Capacitor discharge circuit z AC switches © ...