MOS Transistor. IXBT16N170 Datasheet

IXBT16N170 Transistor. Datasheet pdf. Equivalent

Part IXBT16N170
Description BIMOSFET Monolithic Bipolar MOS Transistor
Feature High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH16N170 IXBT16N170 VCES = .
Manufacture IXYS
Datasheet
Download IXBT16N170 Datasheet

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Tr IXBT16N170 Datasheet
Advanced Technical Information High Voltage, High Gain BIMO IXBT16N170A Datasheet
Recommendation Recommendation Datasheet IXBT16N170 Datasheet




IXBT16N170
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBH16N170
IXBT16N170
VCES =
IC90 =
VCE(sat)
1700V
16A
3.3V
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TTLSOLD
Md
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 22Ω
Clamped inductive load
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)
TO-247
TO-268
Maximum Ratings
1700
1700
V
V
± 20
± 30
V
V
40 A
16 A
120 A
ICM = 40
VCES 1350
250
A
V
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13/10
°C
°C
Nm/lb.in.
6g
4g
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES
VVGCEE
=
=
0.8
0V
VCES
IGES
VCE(sat)
VCE = 0V, VGE = ± 20V
IC = 16A, VGE = 15V, Note 1
Characteristic Values
Min. Typ. Max.
1700
V
3.0 5.5 V
TJ = 125°C
50 μA
2 mA
±100 nA
TJ = 125°C
3.3 V
3.2 V
TO-247 (IXBH)
G
CE
TO-268 (IXBT)
C (TAB)
GE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z High blocking voltage
z International standard packages
z Low conduction losses
Advantages
z Low gate drive requirement
z High power density
Applications:
z Switched-mode and resonant-mode
power supplies
z Uninterruptible power supplies (UPS)
z Laser generator
z Capacitor discharge circuit
z AC switches
© 2008 IXYS CORPORATION, All rights reserved
DS98657B(10/08)



IXBT16N170
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfS IC = 16A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge IC = 16A, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tr
td(off)
tf
Resistive Switching times, TJ = 25°C
IC = 16A, VGE = 15V
VCE = 850V, RG = 22Ω
td(on)
tr
td(off)
tf
Resistive Switching times, TJ = 125°C
IC = 16A, VGE = 15V
VCE = 850V, RG = 22Ω
Characteristic Values
Min. Typ. Max.
8.5 14
S
1960
85
24
pF
pF
pF
72 nC
12 nC
25 nC
38 ns
101 ns
125 ns
480 ns
37 ns
183 ns
235 ns
705 ns
RthJC
RthCS
0.50 °C/W
0.25 °C/W
Reverse Diode
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
VF IF = 16A, VGE = 0V
trr IF = 8A, VGE = 0V, -diF/dt = 100A/μs
IRM VR = 100V, VGE = 0V
Characteristic Values
Min. Typ. Max.
2.6 V
1.32 μs
26 A
IXBH16N170
IXBT16N170
TO-247 (IXBH) Outline
123
P
e
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
2 - Drain
Tab - Drain
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 (IXBT) Outline
Note 1: Pulse test, t 300μs, duty cycle, d 2%.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)