Document
STP8NM50 STP8NM50FP
N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh™ Power MOSFET
General features
Type
VDSS (@Tjmax)
RDS(on)
ID
STP8NM50
t(s)STP8NM50FP
550V 550V
<0.8Ω <0.8Ω
8A 8A (1)
c1. Limited only by maximum temperature allowed
du■ 100% avalanche tested ro■ High dv/dt and avalanche capabilities P■ Low gate input resistance te■ Low input capacitance and gate charge
soleDescription bThe MDmesh™ is a new revolutionary Power - OMOSFET technology that associates the multiple )drain process with the company’s PowerMESH™ t(shorizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
ucdv/dt and excellent avalanche characteristics. The dadoption of the company’s proprietary strip rotechnique yields overall dynamic performance Pthat is significantly better than that of similar
competition’s products.
leteApplications Obso■ Switching application
3 2 1
TO-220
3 2 1
TO-220FP
Internal schematic diagram
Order codes
Part number STP8NM50 STP8NM50FP
Marking P8NM50 P8NM50FP
Package TO-220 TO-220FP
Packaging Tube Tube
October 2006
Rev 7
1/14
www.st.com
14
Contents
Contents
STP8NM50 - STP8NM50FP
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
)4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Obsolete Product(s) - Obsolete Product(s5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STP8NM50 - STP8NM50FP
1 Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value Unit
TO-220 TO-220FP
VGS Gate-source voltage
± 30 V
ID Drain current (continuous) at TC = 25°C
8
8 (1)
A
ID
)IDM (2) t(sPTOT ducdv/dt(3)
Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Peak diode recovery voltage slope
ProVISO
Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C)
teTj Operating junction temperature leTstg Storage temperature so1. Limited only by maximum temperature allowed b2. Pulse width limited by safe operating area O3. ISD ≤8 A, di/dt ≤200 A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.
5 32 100
0.8 15
5 (1) 32 (1)
25
-- 2500
A A W W/°C V/ns
V
-65 to 150
°C
t(s) -Table 2. Thermal data
cSymbol
Parameter
duRthj-case Thermal resistance junction-case max roRthj-amb Thermal resistance junction-amb max PTl Maximum lead temperature for soldering purpose
TO-220 TO-220FP Unit
1.25 62.5 300
5
°C/W °C/W
°C
oleteTable 3. Avalanche characteristics
Obs Symbol
Parameter
Max v.