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P8NM50 Dataheets PDF



Part Number P8NM50
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description STP8NM50
Datasheet P8NM50 DatasheetP8NM50 Datasheet (PDF)

STP8NM50 STP8NM50FP N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh™ Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID STP8NM50 t(s)STP8NM50FP 550V 550V <0.8Ω <0.8Ω 8A 8A (1) c1. Limited only by maximum temperature allowed du■ 100% avalanche tested ro■ High dv/dt and avalanche capabilities P■ Low gate input resistance te■ Low input capacitance and gate charge soleDescription bThe MDmesh™ is a new revolutionary Power - OMOSFET technology that associates the mul.

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STP8NM50 STP8NM50FP N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh™ Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID STP8NM50 t(s)STP8NM50FP 550V 550V <0.8Ω <0.8Ω 8A 8A (1) c1. Limited only by maximum temperature allowed du■ 100% avalanche tested ro■ High dv/dt and avalanche capabilities P■ Low gate input resistance te■ Low input capacitance and gate charge soleDescription bThe MDmesh™ is a new revolutionary Power - OMOSFET technology that associates the multiple )drain process with the company’s PowerMESH™ t(shorizontal layout. The resulting product has an outstanding low on-resistance, impressively high ucdv/dt and excellent avalanche characteristics. The dadoption of the company’s proprietary strip rotechnique yields overall dynamic performance Pthat is significantly better than that of similar competition’s products. leteApplications Obso■ Switching application 3 2 1 TO-220 3 2 1 TO-220FP Internal schematic diagram Order codes Part number STP8NM50 STP8NM50FP Marking P8NM50 P8NM50FP Package TO-220 TO-220FP Packaging Tube Tube October 2006 Rev 7 1/14 www.st.com 14 Contents Contents STP8NM50 - STP8NM50FP 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 )4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Obsolete Product(s) - Obsolete Product(s5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STP8NM50 - STP8NM50FP 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit TO-220 TO-220FP VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 8 8 (1) A ID )IDM (2) t(sPTOT ducdv/dt(3) Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Peak diode recovery voltage slope ProVISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) teTj Operating junction temperature leTstg Storage temperature so1. Limited only by maximum temperature allowed b2. Pulse width limited by safe operating area O3. ISD ≤8 A, di/dt ≤200 A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. 5 32 100 0.8 15 5 (1) 32 (1) 25 -- 2500 A A W W/°C V/ns V -65 to 150 °C t(s) -Table 2. Thermal data cSymbol Parameter duRthj-case Thermal resistance junction-case max roRthj-amb Thermal resistance junction-amb max PTl Maximum lead temperature for soldering purpose TO-220 TO-220FP Unit 1.25 62.5 300 5 °C/W °C/W °C oleteTable 3. Avalanche characteristics Obs Symbol Parameter Max v.


AOP1203-2001 P8NM50 CYRF89435


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