Si4686DY

N-Channel 30-V (D-S) MOSFET Si4686DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.0095 at VGS = 10 V 0.014 at VGS = 4.5 V ID (A)a 18.2 15 Qg (Typ.) 9.2 nC S1 S2 S3 G4 SO-8 8D 7D 6D 5D FEATURES Halogen-free According to IEC 61249-2-21 Available Extremely Low Qgd WFET® Technology for Low Switching Losses TrenchFET® Power MOSFETs 100 % Rg Tested APPLICATIONS High-Side DC/DC Conversion - Notebook - Server D G Top View Ordering Information: Si4686DY-T1-E3 (Lead (Pb)-free) Si4686DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single-Pulse Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) Limit 30 ± 20 18.2 14.5 13.8b, c 11b, c 50 4.3 2.5b, c 10 5 5.2 3.3 3.0b, c 1.9b, c - 55 to 150 S N-Channel MOSFET Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State con...