IGBT Module. MWI80-12T6K Datasheet

MWI80-12T6K Module. Datasheet pdf. Equivalent


Part MWI80-12T6K
Description IGBT Module
Feature IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA Preliminary data Part name (Marking on.
Manufacture IXYS
Datasheet
Download MWI80-12T6K Datasheet


IGBT Module Sixpack Short Circuit SOA Capability Square RBSO MWI80-12T6K Datasheet
Recommendation Recommendation Datasheet MWI80-12T6K Datasheet




MWI80-12T6K
IGBT Module
Sixpack
Short Circuit SOA Capability
Square RBSOA
Preliminary data
Part name (Marking on product)
MWI 80-12T6K
10, 23
14
8
13
NTC
7
6
5
9, 24
18
17
4
3
22
21
2
1
MWI 80-12T6K
IC25 = 80 A
VCES = 1200 V
VCE(sat) typ. = 2.0 V
11, 12
15, 16
19, 20
E72873
Pin configuration see outlines.
Features:
• Trench IGBTs
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance also in resonant circuits
• HiPerFREDTM diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
• Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
Application:
• AC drives
• UPS
• Welding
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
Package:
• UL registered
• Industry standard E1-pack
20071113a
-4



MWI80-12T6K
MWI 80-12T6K
IGBTs
Symbol
VCES
VGES
VGEM
IC25
IC80
Ptot
VCE(sat)
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
VGE(th)
ICES
gate emitter threshold voltage
collector emitter leakage current
IGES
Cies
QG(on)
td(on)
tr
td(off)
tf
Eon
Eoff
ICM
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
tSC
(SCSOA)
RthJC
RthCH
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
continuous
transient
TVJ = 25°C to 150°C
IC = 50 A; VGE = 15 V
IC = 2 mA; VGE = VCE
VCE = VCES; VGE = 0 V
VCE = 0 V; VGE = ±20 V
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 50 A
TC = 25°C
TC = 80°C
TC = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
inductive load
VCE = 600 V; IC = 50 A
VGE = ±15 V; RG = 18 W
TVJ = 125°C
RBSOA; VGE = ±15 V; RG = 18 W
L = 100 µH; clamped induct. load TVJ = 125°C
VCEmax = VCES - LS·di/dt
VCE = 900 V; VGE = ±15 V;
RG = 18 W; non-repetitive
TVJ = 125°C
(per IGBT)
(per IGBT)
min.
4.5
Ratings
typ. max.
1200
±20
±30
80
56
270
2.0 2.4
2.3
6.5
1
0.8
400
3600
470
90
50
520
90
5
6.5
100
10
0.46
0.2
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
pF
nC
ns
ns
ns
ns
mJ
mJ
A
µs
K/W
K/W
Diodes
Symbol
VRRM
IF25
IF80
Symbol
Definitions
max. repetitive reverse voltage
forward current
Conditions
Conditions
VF
IRM
trr
RthJC
RthCH
forward voltage
max. reverse recovery current
reverse recovery time
thermal resistance junction to case
thermal resistance case to heatsink
IF = 50 A
VR = 600 V; IF = 50 A
diF /dt = -600 A/µs
(per diode)
(per diode)
TC = 25°C
TC = 80°C
Maximum Ratings
1200
V
80 A
51 A
TVJ = 25°C
TVJ = 125°C
TVJ = 100°C
TVJ = 25°C
Characteristic Values
min. typ. max.
2.3 2.6
1.6
V
V
35 A
200 ns
0.65 K/W
0.25 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20071113a
-4







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