MWI35-12A7

MWI 35-12 A7 MWI 35-12 A7T IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA I = 62 A C25 VCES = 1200 V VCE(sat) typ. = 2.2 V 13 Preliminary Data Type: MWI 35-12 A7 MWI 35-12 A7T NTC - Option: without NTC with NTC 1 2 3 4 17 59 6 10 7 11 8 12 T 16 15 14 NTC T IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 ± 20 V V TC = 25°C TC = 80°C 62 44 VGE = ±15 V; R G = 39 W; TVJ = 125°C Clamped inductive load; L = 100 µH ICM = 70 VCEK £ VCES VCE = VCES; VGE = ±15 V; RG = 39 W; TVJ = 125°C non-repetitive 10 A A A µs TC = 25°C 280 W Symbol V CE(sat) VGE(th) ICES IGES td(on) t r td(off) t f Eon Eoff C ies QGon RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. I C = 35 A; V GE = 15 V; TVJ = 25°C TVJ = 125°C IC = 1.2 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C V = 600 V; I = 35 A CE C VGE = ±15 V; RG = 39 W 2.2 2.8 V 2.6 V 4.5 6.5 V 2 mA 2 mA 200 nA 100 ns 80 ns 500 ns 70 ns 5.4 mJ 4.2 mJ V = 25 V; V = 0 V; f = 1 MHz CE GE VCE = 600V; VGE = 15 V; IC = 35 A (per IGBT) 2000 140 pF nC 0.44 K/W Features q NPT IGBT technology q low saturation voltage q low switching losses q switching frequency up to 30 kHz q square RBSOA, no latch up q high short circuit capability q positive temperature coefficient for easy parallelling q MOS input, voltage contro...