IGBT Module. MWI25-12A7 Datasheet

MWI25-12A7 Module. Datasheet pdf. Equivalent


Part MWI25-12A7
Description IGBT Module
Feature IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA Part name (Marking on product) MWI25-.
Manufacture IXYS
Datasheet
Download MWI25-12A7 Datasheet


IGBT Module Sixpack Short Circuit SOA Capability Square RBSO MWI25-12A7 Datasheet
IGBT Module Sixpack Short Circuit SOA Capability Square RBSO MWI25-12A7T Datasheet
Recommendation Recommendation Datasheet MWI25-12A7 Datasheet




MWI25-12A7
IGBT Module
Sixpack
Short Circuit SOA Capability
Square RBSOA
Part name (Marking on product)
MWI25-12A7
MWI25-12A7T
13
T version
T
1
2
5
6
T
3
4
17
7
8
9
10
11
12
MWI 25-12A7(T)
IC25 = 50 A
VCES = 1200 V
VCE(sat) typ. = 2.2 V
16
15
14 E72873
Pin configuration see outlines.
Features:
• NPT IGBT technology
• low saturation voltage
• positive temperature coefficient for
easy paralleling
• low switching losses
• switching frequency up to 30 kHz
• square RBSOA, no latch up
• high short circuit capability
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• space savings
• reduced protection circuits
Application:
• AC motor control
• AC servo and robot drives
power supplies
Package:
• UL registered
• Industry standard E2-pack
• package with copper base plate
• package designed for wave soldering
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
20080805a
1-6



MWI25-12A7
MWI 25-12A7(T)
IGBTs
Symbol
VCES
VGES
VGEM
IC25
IC80
Ptot
VCE(sat)
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
VGE(th)
ICES
gate emitter threshold voltage
collector emitter leakage current
IGES
Cies
QG(on)
td(on)
tr
td(off)
tf
Eon
Eoff
ICM
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
tSC
(SCSOA)
RthJC
short circuit safe operating area
thermal resistance junction to case
Conditions
continuous
transient
TVJ = 25°C to 150°C
IC = 25 A; VGE = 15 V
IC = 1 mA; VGE = VCE
VCE = VCES; VGE = 0 V
VCE = 0 V; VGE = ±20 V
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 35 A
TC = 25°C
TC = 80°C
TC = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
inductive load
VCE = 600 V; IC = 25 A
VGE = ±15 V; RG = 47 W
TVJ = 125°C
RBSOA; VGE = ±15 V; RG = 47 W
L = 100 µH; clamped induct. load TVJ = 125°C
VCEmax = VCES - LS·di/dt
VCE = VCES; VGE = ±15 V;
RG = 47 W; non-repetitive
TVJ = 125°C
(per IGBT)
min.
4.5
Ratings
typ. max.
1200
±20
±30
50
35
225
2.2 2.7
2.6
6.5
2
2
200
1650
120
100
70
500
70
3.8
2.8
70
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
pF
nC
ns
ns
ns
ns
mJ
mJ
A
10 µs
0.55 K/W
Diodes
Symbol
VRRM
IF25
IF80
VF
Definitions
max. repetitve reverse voltage
forward current
forward voltage
IRM
trr
Erec(off)
RthJC
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
Conditions
IF = 25 A; VGE = 0 V
VR = 600 V
diF /dt = -400 A/µs
IF = 25 A; VGE = 0 V
(per diode)
Ratings
min. typ. max.
TVJ = 150°C
TC = 25°C
TC = 80°C
TVJ = 25°C
TVJ = 125°C
TVJ = 125°C
1200
50
33
2.3 2.7
1.7
20
200
1.3
1.19
TC = 25°C unless otherwise stated
Unit
V
A
A
V
V
A
ns
mJ
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
20080805a
2-6







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)