IGBT Module. MWI35-12A7 Datasheet

MWI35-12A7 Module. Datasheet pdf. Equivalent


Part MWI35-12A7
Description IGBT Module
Feature MWI 35-12 A7 IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 1 2 3 4 17 59 6 10.
Manufacture IXYS
Datasheet
Download MWI35-12A7 Datasheet


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MWI35-12A7
MWI 35-12 A7
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
13
1
2
3
4
17
59
6 10
7 11
8 12
IC25 = 62 A
VCES
= 1200 V
VCE(sat) typ. = 2.2 V
16
15
14
E72873
See outline drawing for pin arrangement
IGBTs
Symbol
VCES
VGES
IC25
IC80
RBSOA
t
SC
(SCSOA)
Ptot
Symbol
VCE(sat)
V
GE(th)
ICES
IGES
t
d(on)
tr
td(off)
tf
Eon
Eoff
Cies
QGon
R
thJC
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
± 20
V
V
TC = 25°C
TC = 80°C
62
44
VGE = ±15 V; RG = 39 Ω; TVJ = 125°C
Clamped inductive load; L = 100 µH
ICM = 70
VCEK VCES
V
CE
=
V;
CES
VGE
=
±15
V;
R
G
=
39
Ω;
TVJ
=
125°C
non-repetitive
10
A
A
A
µs
TC = 25°C
280 W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 35 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
I = 1.2 mA; V = V
C GE CE
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 35 A
V
GE
=
±15
V;
R
G
=
39
Ω
2.2 2.8 V
2.6 V
4.5 6.5 V
2 mA
2 mA
200 nA
100 ns
80 ns
500 ns
70 ns
5.4 mJ
4.2 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600V; VGE = 15 V; IC = 35 A
(per IGBT)
2000
140
pF
nC
0.44 K/W
Features
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
Advantages
space savings
reduced protection circuits
package designed for wave soldering
Typical Applications
AC motor control
AC servo and robot drives
power supplies
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20070912a
1-4



MWI35-12A7
MWI 35-12 A7
Diodes
Symbol
IF25
IF80
Conditions
TC = 25°C
TC = 80°C
Maximum Ratings
50 A
33 A
Equivalent Circuits for Simulation
Conduction
Symbol
VF
IRM
trr
RthJC
Conditions
IF = 35 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
IF = 35 A; diF/dt = -400 A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
(per diode)
Characteristic Values
min. typ. max.
2.8 V
1.9 V
20 A
200 ns
1.19 K/W
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.6 V; R0 = 28 mΩ
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.3 V; R0 = 24.9 mΩ
Thermal Response
Temperature Sensor NTC (MWI ... A7T version only)
Symbol
Conditions
R25
B
25/50
Module
Symbol
TVJ
Tstg
VISOL
Md
T = 25°C
Conditions
IISOL 1 mA; 50/60 Hz
Mounting torque (M5)
Characteristic Values
min. typ. max.
4.75 5.0 5.25 kΩ
3375
K
Maximum Ratings
-40...+150
-40...+125
°C
°C
2500
V~
2.7 - 3.3
Nm
IGBT (typ.)
Cth1 = 0.166 J/K; Rth1 = 0.342 K/W
Cth2 = 1.921 J/K; Rth2 = 0.098 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.081 J/K; Rth1 = 0.973 K/W
Cth2 = 0.915 J/K; Rth2 = 0.217 K/W
Dimensions in mm (1 mm = 0.0394")
Symbol
Rpin-chip
dS
d
A
R
thCH
Weight
Conditions
Creepage distance on surface
Strike distance in air
with heatsink compound
Characteristic Values
min. typ. max.
5 mΩ
6 mm
6 mm
0.02 K/W
180 g
© 2007 IXYS All rights reserved
Higher magnification on page B3 - 72
20070912a
2-4







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