IGBT Module. MWI25-12E7 Datasheet

MWI25-12E7 Module. Datasheet pdf. Equivalent


Part MWI25-12E7
Description IGBT Module
Feature MWI 25-12 E7 IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA IC25 = 52 A VCES = 12.
Manufacture IXYS
Datasheet
Download MWI25-12E7 Datasheet


MWI 25-12 E7 IGBT Module Sixpack Short Circuit SOA Capabili MWI25-12E7 Datasheet
Recommendation Recommendation Datasheet MWI25-12E7 Datasheet




MWI25-12E7
MWI 25-12 E7
IGBT Module
Sixpack
Short Circuit SOA Capability
Square RBSOA
IC25 = 52 A
VCES
= 1200 V
VCE(sat) typ. = 1.9 V
IGBTs
Symbol
VCES
VGES
IC25
IC80
ICM
VCEK
t
SC
Ptot
Symbol
VCE(sat)
V
GE(th)
ICES
IGES
t
d(on)
tr
td(off)
tf
Eon
Eoff
Cies
QGon
R
thJC
13
1 59
2 6 10
3 7 11
4 8 12
17
16
15
14
E72873
See outline drawing for pin arrangement
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
± 20
V
V
TC = 25°C
TC = 80°C
VGE = ±15 V; RG = 39 Ω; TVJ = 125°C
RBSOA; clamped inductive load; L = 100 µH
V
CE
=
900
V;
VGE
=
±15
V;
R
G
=
39
Ω;
TVJ
=
125°C
SCSOA; non-repetitive
52
36
70
VCES
10
A
A
A
µs
TC = 25°C
225 W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 25 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
I = 1 mA; V = V
C GE CE
VCE = VCES;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 25 A
V
GE
=
±15
V;
R
G
=
39
Ω
1.9 2.4 V
2.1 V
4.5 6.5 V
0.4 mA
0.4 mA
200 nA
80 ns
50 ns
440 ns
50 ns
3.8 mJ
2.0 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 35 A
(per IGBT)
2 nF
150 nC
0.55 K/W
Features
• NPT3 IGBTs
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance also in resonant
circuits
• HiPerFREDTM diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
• Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
Typical Applications
• AC drives
• power supplies with power factor
correction
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1-4



MWI25-12E7
MWI 25-12 E7
Diodes
Symbol
IF25
IF80
Symbol
VF
IRM
trr
Erec(off)
RthJC
Module
Symbol
TVJ
Tstg
V
ISOL
Md
Symbol
Rpin-chip
dS
d
A
RthCH
Weight
Conditions
TC = 25°C
TC = 80°C
Maximum Ratings
50 A
33 A
Conditions
Characteristic Values
min. typ. max.
IF = 25 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
IF = 30 A; diF/dt = -1100 A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
2.3 2.7 V
1.7 V
51 A
180 ns
1.8 mJ
(per diode)
1.19 K/W
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 0.95 V; R0 = 48 mΩ
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.3 V; R0 = 16.0 mΩ
Thermal Response
Conditions
I
ISOL
1
mA;
50/60
Hz
Mounting torque (M5)
Conditions
Creepage distance on surface
Strike distance in air
with heatsink compound
Maximum Ratings
-40...+150
-40...+125
°C
°C
2500
V~
2.7 - 3.3
Nm
Characteristic Values
min. typ. max.
5 mΩ
6 mm
6 mm
0.02 K/W
180 g
IGBT (typ.)
Cth1 = 0.129 J/K; Rth1 = 0.415 K/W
Cth2 = 1.279 J/K; Rth2 = 0.135 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.069 J/K; Rth1 = 0.956 K/W
Cth2 = 0.847 J/K; Rth2 = 0.234 K/W
Dimensions in mm (1 mm = 0.0394")
© 2004 IXYS All rights reserved
2-4







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