MWI25-12E7

MWI 25-12 E7 IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA IC25 = 52 A VCES = 1200 V VCE(sat) typ. = 1.9 V IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK t SC Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Eon Eoff Cies QGon R thJC 13 1 59 2 6 10 3 7 11 4 8 12 17 16 15 14 E72873 See outline drawing for pin arrangement Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 ± 20 V V TC = 25°C TC = 80°C VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBSOA; clamped inductive load; L = 100 µH V CE = 900 V; VGE = ±15 V; R G = 39 Ω; TVJ = 125°C SCSOA; non-repetitive 52 36 70 VCES 10 A A A µs TC = 25°C 225 W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 25 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C I = 1 mA; V = V C GE CE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 25 A V GE = ±15 V; R G = 39 Ω 1.9 2.4 V 2.1 V 4.5 6.5 V 0.4 mA 0.4 mA 200 nA 80 ns 50 ns 440 ns 50 ns 3.8 mJ 2.0 mJ VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 35 A (per IGBT) 2 nF 150 nC 0.55 K/W Features NPT3 IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current Industry Standard Package - solderable p...