IGBT Module. MWI200-06A8 Datasheet

MWI200-06A8 Module. Datasheet pdf. Equivalent


Part MWI200-06A8
Description IGBT Module
Feature MWI 200-06 A8 IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA Preliminary data 13, .
Manufacture IXYS
Datasheet
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MWI 200-06 A8 IGBT Modules Sixpack Short Circuit SOA Capabi MWI200-06A8 Datasheet
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MWI200-06A8
MWI 200-06 A8
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
Preliminary data
13, 21
1
2
3
4
14, 20
59
6 10
7 11
8 12
IC25 = 225 A
VCES = 600 V
VCE(sat) =typ. 2.0 V
19
17
15
E72873
See outline drawing for pin arrangement
IGBTs
Symbol
VCES
VGES
IC25
IC80
RBSOA
tSC
(SCSOA)
Ptot
Symbol
VCE(sat)
VGE(th)
ICES
I
GES
td(on)
tr
td(off)
tf
E
on
Eoff
Cies
QGon
RthJC
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600 V
± 20 V
TC = 25°C
TC = 80°C
225
155
VGE = ±15 V; RG = 1.5 Ω; TVJ = 125°C
Clamped inductive load; L = 100 µH
ICM = 400
VCEK VCES
VCE = VCES; VGE = ±15 V; RG = 1.5 Ω; TVJ = 125°C
non-repetitive
10
A
A
A
µs
TC = 25°C
675 W
Conditions
Characteristic Values
(T
VJ
=
25°C,
unless
otherwise
specified)
min. typ. max.
IC = 200 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
IC = 4 mA; VGE = VCE
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
V = 0 V; V = ± 20 V
CE GE
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 200 A
VGE = ±15 V; RG = 1.5 Ω
2.0 2.5 V
2.3 V
4.5 6.5 V
1.8 mA
1.5 mA
400 nA
180 ns
50 ns
300 ns
40 ns
4.6 mJ
6.3 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 300 V; VGE = 15 V; IC = 200 A
(per IGBT)
9.0 nF
670 nC
0.18 K/W
Features
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
Advantages
space savings
reduced protection circuits
package designed for wave soldering
Typical Applications
AC motor control
AC servo and robot drives
power supplies
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20070912a
1-2



MWI200-06A8
MWI 200-06 A8
Diodes
Symbol
IF25
IF80
Conditions
TC = 25°C
TC = 80°C
Maximum Ratings
260 A
165 A
Equivalent Circuits for Simulation
Conduction
Symbol
V
F
IRM
t
rr
RthJC
Module
Symbol
TVJ
TJM
Tstg
VISOL
Md
Symbol
Rpin-chip
dS
dA
RthCH
Weight
Conditions
Characteristic Values
min. typ. max.
I
F
=
200
A;
V
GE
=
0
V;
TVJ
=
25°C
TVJ = 125°C
IF = 120 A; diF/dt = -1000 A/µs; TVJ = 125°C
V = 300 V; V = 0 V
R GE
(per diode)
1.9 2.1 V
1.5 V
56 A
100 ns
0.3 K/W
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.1 V; R0 = 6 mΩ
Free wheeling Diode (typ. at TJ = 125°C)
V0 = 1.1 V; R0 = 2 mΩ
Thermal Response
Conditions
operating
IISOL 1 mA; 50/60 Hz
Mounting torque (M5)
Conditions
Creepage distance on surface
Strike distance in air
with heatsink compound
Maximum Ratings
-40...+125
+150
-40...+125
°C
°C
°C
2500
V~
3-6
Nm
Characteristic Values
min. typ. max.
1.8 mΩ
10 mm
10 mm
0.01 K/W
300 g
IGBT (typ.)
Cth1 = 0.397 J/K; Rth1 = 0.131 K/W
Cth2 = 2.243 J/K; Rth2 = 0.049 K/W
Free wheeling Diode (typ.)
Cth1 = 0.281 J/K; Rth1 = 0.236 K/W
Cth2 = 1.945 J/K; Rth2 = 0.064 K/W
Dimensions in mm (1 mm = 0.0394")
© 2007 IXYS All rights reserved
20070912a
2-2







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