IGBT Module
MWI 100-12 A8
IGBT Modules Sixpack
Short Circuit SOA Capability Square RBSOA
IC25 = 160 A
VCES
= 1200 V
VCE(sat) ty...
Description
MWI 100-12 A8
IGBT Modules Sixpack
Short Circuit SOA Capability Square RBSOA
IC25 = 160 A
VCES
= 1200 V
VCE(sat) typ. = 2.2 V
13, 21
IGBTs
Symbol VCES VGES IC25 IC80 RBSOA
t SC
(SCSOA) Ptot
Symbol
VCE(sat)
V GE(th)
ICES
IGES t
d(on)
tr td(off) tf Eon Eoff Cies QGon R
thJC
1 2
3 4 14, 20
59 6 10
7 11 8 12
19
17 15
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200 ± 20
V V
TC = 25°C TC = 80°C
160 110
VGE = ±15 V; RG = 6.8 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH
ICM = 200 VCEK ≤ VCES
V CE
=
V; CES
VGE
=
±15
V;
R G
=
6.8
Ω;
TVJ
=
125°C
non-repetitive
10
A A A
µs
TC = 25°C
640 W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified) min. typ. max.
IC = 100 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C
I = 4 mA; V = V
C GE CE
VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 100 A
V GE
=
±15
V;
R G
=
6.8
Ω
2.2 2.5 4.5
4
100 60
600 90
16.1 14.6
2.6 V V
6.5 V
6.3 mA mA
400 nA
ns ns ns ns mJ mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 100 A
(per IGBT)
6.5 nF 475 nC
0.19 K/W
E72873
See outline drawing for pin arrangement
Features
€€NPT IGBT technology €€low saturation voltage €€low switching losses €€switching frequency up to 30 kHz €€square RBSOA, no latch up €€high short circuit capability €€positive temperature coefficient for
easy parallelling €€MOS input, voltage controlled €€ultra fast free wheeling diodes €€soldera...
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