IGBT Module. MWI450-12E9 Datasheet

MWI450-12E9 Module. Datasheet pdf. Equivalent


Part MWI450-12E9
Description IGBT Module
Feature MWI 450-12 E9 IGBT Modules Sixpack 15 28 16 17 29 13 14 2 20 21 22 11/12 18 19 1 4 25 26 27 9/10.
Manufacture IXYS
Datasheet
Download MWI450-12E9 Datasheet


MWI 450-12 E9 IGBT Modules Sixpack 15 28 16 17 29 13 14 2 MWI450-12E9 Datasheet
Recommendation Recommendation Datasheet MWI450-12E9 Datasheet




MWI450-12E9
MWI 450-12 E9
IGBT Modules
Sixpack
15
28 16
17
29 13
14
2
20
21
22
11/12
18
19
1
4
25
26
27
9/10
23
24
3
IC80 = 440 A
VCES = 1200 V
VCE(sat) typ. = 2.2 V
6
7/8
E72873
5 See outline drawing for pin arrangement
IGBTs
Symbol
VCES
VGES
IC25
IC80
RBSOA
tSC
(SCSOA)
Ptot
Conditions
TVJ = 25°C to 125°C
TC = 25°C
TC = 80°C
RG = 2.7 ; TVJ = 125°C
Clamped inductive load; L = 100 µH
VCE = 900 V; VGE = ±15 V; RG = 2.7
TVJ = 125°C; non-repetitive; VCEmax < VCES
TC = 25°C
Maximum Ratings
1200 V
± 20 V
640
440
ICM = 900
VCEK < VCES
10
A
A
A
µs
2.2 kW
Symbol
VCE(sat)
VGE(th)
ICES
IGES
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
QGon
RthJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 450 A; VGE = 15 V
IC = 18 mA; VGE = VCE
VCE = VCES; VGE = 0 V
VCE = 0 V; VGE = ± 20 V
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 450 A
VGE = ±15 V; RG = 2.7
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 450 A
2.2
2.5
4.5
2.4
6.5
V
V
V
1 mA
6 21 mA
600 nA
190
116
475
100
35
47
33
3.3
0.057
ns
ns
ns
ns
mJ
mJ
nF
µC
K/W
Features
• NPT3 IGBT technology
• low saturation voltage
• low switching losses
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient for
easy parallelling
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• package with copper base plate
Advantages
• space savings
• reduced protection circuits
• package designed for wave soldering
Typical Applications
• AC motor control
• AC servo and robot drives
• power supplies
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20100401a
1-5



MWI450-12E9
Diodes
Symbol
IF80
IFRM
I2t
Symbol
VF
IRM
RthJC
Conditions
TC = 80°C
tp = 1 ms
TVJ = 125°C; t = 10 ms; VR = 0 V
Maximum Ratings
450 A
900 A
35000 A2s
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IF = 450 A; VGE = 0 V; TVJ = 25°C
IF = 450 A; diF/dt = 3500 A/µs;
TVJ = 125°C; VR = 800 V
2.2
200
V
A
0.075
K/W
Temperature Sensor NTC
Symbol Conditions
R25
B25/50
T = 25°C
Module
Symbol
TVJ
TJM
Tstg
VISO
Md
Conditions
operating
IISOL < 1 mA; 50/60 Hz
Mounting torque (M5)
Terminal connection torque (M6)
Symbol Conditions
R *)
therm-chip
dS
dA
Resistance terminal to chip
Creepage distance on surface
Strike distance in air
RthCH
Weight
with heatsink compound
*) V = VCEsat + 2x Rtherm-chip·IC resp. V = VF + 2x R·IF
Characteristic Values
min. typ. max.
4.75 5.0 5.25 k
3375
K
Maximum Ratings
-40...+125
+150
-40...+125
°C
°C
°C
3400 V~
3 - 6 Nm
3 - 6 Nm
Characteristic Values
min. typ. max.
0.55
12.7
10
m
mm
mm
0.01 K/W
900 g
MWI 450-12 E9
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20100401a
2-5







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