IGBT Module
Advanced Technical Information
MWI 300-17 E9
IGBT Modules Sixpack
NPT3 IGBT
IC80 = 350 A VCES = 1700 V VCE(sat) typ. ...
Description
Advanced Technical Information
MWI 300-17 E9
IGBT Modules Sixpack
NPT3 IGBT
IC80 = 350 A VCES = 1700 V VCE(sat) typ. = 2.3 V
IGBTs
Symbol VCES VGES IC25 IC80 RBSOA
tSC (SCSOA) Ptot
Symbol
V CE(sat)
VGE(th) ICES
I
GES
td(on) tr t
d(off)
tf E
on
Eoff Cies Q
Gon
RthJC
2 46
15 28
16 17
29 13 14
20 21 22
11/12
18 19
1
25 26 27
9/10
23 24
3
7/8 5
Conditions
TVJ = 25°C to 125°C
TC = 25°C TC = 80°C RG = 3.3 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH VCE = 1200 V; VGE = ±15 V; RG = 3.3 Ω; TVJ = 125°C; non-repetitive; VCEmax < VCES TC = 25°C
Maximum Ratings
1700
V
± 20 V
500 A 350 A
ICM = 700 VCEK ≤ VCES
10
A µs
2.2 kW
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified) min. typ. max.
I
C
=
300
A;
V GE
=
15
V;
TVJ
=
25°C
TVJ = 125°C
IC = 30 mA; VGE = VCE
VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C
V = 0 V; V = ± 20 V CE GE
Inductive load, TVJ = 125°C
VCE = 900 V; IC = 300 A VGE = ±15 V; RG = 3.3 Ω
2.3 2.7
4.5
0.5 7
180 110 500 110 100
80
2.7 V 3.2 V
6.5 V
1 mA 22 mA
1.5 µA
ns ns ns ns mJ mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz V = 900 V; V = 15 V; I = 300 A
CE GE C
33 nF 2.6 µC
0.057 K/W
E72873
See outline drawing for pin arrangement
Features
€€NPT3 IGBT technology €€low saturation voltage €€low switching losses €€square RBSOA, no latch up €€high short circuit capability €€positive temperature coefficient for
easy parallelling €€MOS input, voltage controlled €€ultra fast free wheeling diodes €€solderable pins for PCB m...
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