IGBT Module. MWI300-17E9 Datasheet

MWI300-17E9 Module. Datasheet pdf. Equivalent


Part MWI300-17E9
Description IGBT Module
Feature Advanced Technical Information MWI 300-17 E9 IGBT Modules Sixpack NPT3 IGBT IC80 = 350 A VCES = 1.
Manufacture IXYS
Datasheet
Download MWI300-17E9 Datasheet


Advanced Technical Information MWI 300-17 E9 IGBT Modules MWI300-17E9 Datasheet
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MWI300-17E9
Advanced Technical Information
MWI 300-17 E9
IGBT Modules
Sixpack
NPT3 IGBT
IC80 = 350 A
VCES = 1700 V
VCE(sat) typ. = 2.3 V
IGBTs
Symbol
VCES
VGES
IC25
IC80
RBSOA
tSC
(SCSOA)
Ptot
Symbol
V
CE(sat)
VGE(th)
ICES
I
GES
td(on)
tr
t
d(off)
tf
E
on
Eoff
Cies
Q
Gon
RthJC
2 46
15
28
16
17
29 13
14
20
21
22
11/12
18
19
1
25
26
27
9/10
23
24
3
7/8
5
Conditions
TVJ = 25°C to 125°C
TC = 25°C
TC = 80°C
RG = 3.3 Ω; TVJ = 125°C
Clamped inductive load; L = 100 µH
VCE = 1200 V; VGE = ±15 V; RG = 3.3 Ω;
TVJ = 125°C; non-repetitive; VCEmax < VCES
TC = 25°C
Maximum Ratings
1700
V
± 20 V
500 A
350 A
ICM = 700
VCEK VCES
10
A
µs
2.2 kW
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
I
C
=
300
A;
V
GE
=
15
V;
TVJ
=
25°C
TVJ = 125°C
IC = 30 mA; VGE = VCE
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
V = 0 V; V = ± 20 V
CE GE
Inductive load, TVJ = 125°C
VCE = 900 V; IC = 300 A
VGE = ±15 V; RG = 3.3 Ω
2.3
2.7
4.5
0.5
7
180
110
500
110
100
80
2.7 V
3.2 V
6.5 V
1 mA
22 mA
1.5 µA
ns
ns
ns
ns
mJ
mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
V = 900 V; V = 15 V; I = 300 A
CE GE C
33 nF
2.6 µC
0.057 K/W
E72873
See outline drawing for pin arrangement
Features
NPT3 IGBT technology
low saturation voltage
low switching losses
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
Advantages
space savings
reduced protection circuits
package designed for wave soldering
Typical Applications
AC motor control
AC servo and robot drives
power supplies
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20070912a
1-3



MWI300-17E9
Advanced Technical Information
Diodes
Symbol
IF80
IFRM
I2t
Conditions
TC = 80°C
tp = 1 ms
TVJ = 125°C; t = 10 ms; VR = 0 V
Symbol
VF
I
RM
RthJC
Conditions
IF = 300 A; VGE = 0 V; TVJ = 25°C
I = 300 A; di /dt = 2400 A/µs;
FF
TVJ = 125°C; VR = 1200 V
Temperature Sensor NTC
Symbol
Conditions
R25
B25/50
T = 25°C
Maximum Ratings
290 A
570 A
13000
A2s
Characteristic Values
min. typ. max.
2.3 V
240 A
0.11 K/W
Characteristic Values
min. typ. max.
4.75 5.0 5.25 kΩ
3375
K
Module
Symbol
TVJ
TJM
Tstg
VISOL
Md
Conditions
operating
IISOL 1 mA; 50/60 Hz
Mounting torque (M5)
Terminal connection torque (M6)
Symbol
Conditions
R *)
term-chip
dS
dA
RthCH
Weight
Resistance terminal to chip
Creepage distance on surface
Strike distance in air
with heatsink compound
*)
V
=
V
CE(sat)
+
2x
R ·term-chip
IC
resp.
V
=
V
F
+
2x
R ·term-chip
IF
Maximum Ratings
-40...+125
+150
-40...+125
°C
°C
°C
3400
V~
3-6
3-6
Nm
Nm
Characteristic Values
min. typ. max.
0.55 mΩ
12.7 mm
10 mm
0.01 K/W
900 g
MWI 300-17 E9
© 2007 IXYS All rights reserved
20070912a
2-3







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