IGBT Module. MWI15-12A6K Datasheet

MWI15-12A6K Module. Datasheet pdf. Equivalent


Part MWI15-12A6K
Description IGBT Module
Feature IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA Preliminary data Part name (Marking on.
Manufacture IXYS
Datasheet
Download MWI15-12A6K Datasheet


IGBT Module Sixpack Short Circuit SOA Capability Square RBSO MWI15-12A6K Datasheet
Recommendation Recommendation Datasheet MWI15-12A6K Datasheet




MWI15-12A6K
IGBT Module
Sixpack
Short Circuit SOA Capability
Square RBSOA
Preliminary data
Part name (Marking on product)
MWI15-12A6K
10, 23
14
8
13
NTC
7
6
5
9, 24
18
17
4
3
22
21
2
1
MWI 15-12A6K
IC25 = 19 A
VCES = 1200 V
VCE(sat) typ. = 3.0 V
11, 12
15, 16
19, 20
E72873
Pin configuration see outlines.
Features:
• NPT IGBTs
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance also in resonant circuits
• HiPerFREDTM diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
• Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
Application:
• AC drives
• UPS
• Welding
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
Package:
• UL registered
• Industry standard E1-pack
20071113a
-4



MWI15-12A6K
MWI 15-12A6K
IGBTs
Symbol
VCES
VGES
VGEM
IC25
IC80
Ptot
VCE(sat)
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
VGE(th)
ICES
gate emitter threshold voltage
collector emitter leakage current
IGES
Cies
QG(on)
td(on)
tr
td(off)
tf
Eon
Eoff
ICM
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
tSC
(SCSOA)
RthJC
RthCH
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
continuous
transient
TVJ = 25°C to 150°C
TC = 25°C
TC = 80°C
TC = 25°C
IC = 15 A; VGE = 15 V
TVJ = 25°C
TVJ = 125°C
IC = 0.35 mA; VGE = VCE
TVJ = 25°C
VCE = VCES; VGE = 0 V
TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ±20 V
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 10 A
min.
4.5
inductive load
VCE = 600 V; IC = 10 A
VGE = ±15 V; RG = 82 W
TVJ = 125°C
RBSOA; VGE = ±15 V; RG = 82 W
L = 100 µH; clamped induct. load TVJ = 125°C
VCEmax = VCES - LS·di/dt
VCE = 1200 V; VGE = ±15 V;
RG = 82 W; non-repetitive
TVJ = 125°C
(per IGBT)
(per IGBT)
Ratings
typ. max.
1200
±20
±30
19
13
90
3.0 3.4
3.5
6.5
0.9
0.8
100
600
45
50
40
290
60
1.2
1.1
30
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
pF
nC
ns
ns
ns
ns
mJ
mJ
A
10 µs
1.37 K/W
0.5 K/W
Diodes
Symbol
VRRM
IF25
IF80
VF
Definitions
max. repetitve reverse voltage
forward current
forward voltage
IRM
trr
Erec(off)
RthJC
RthCH
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
IF = 15 A; VGE = 0 V
VR = 600 V
diF /dt = -400 A/µs
IF = 15 A; VGE = 0 V
(per diode)
(per diode)
TVJ = 150°C
TC = 25°C
TC = 80°C
TVJ = 25°C
TVJ = 125°C
TVJ = 125°C
min.
Ratings
typ. max.
1200
24
16
2.4 2.7
1.7
16
130
tbd
1.6
0.55
Unit
V
A
A
V
V
A
ns
µJ
K/W
K/W
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20071113a
-4







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