2SD756. D756 Datasheet

D756 2SD756. Datasheet pdf. Equivalent


Part D756
Description 2SD756
Feature 2SD755, 2SD756, 2SD756A Silicon NPN Epitaxial Application • Low frequency high voltage amplifier • .
Manufacture Hitachi Semiconductor
Datasheet
Download D756 Datasheet


2SD755, 2SD756, 2SD756A Silicon NPN Epitaxial Application • D756 Datasheet
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D756
2SD755, 2SD756, 2SD756A
Silicon NPN Epitaxial
Application
Low frequency high voltage amplifier
Complementary pair with 2SB715, 2SB716 and 2SB716A
Outline
TO-92MOD
3
2
1
1. Emitter
2. Collector
3. Base



D756
2SD755, 2SD756, 2SD756A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
2SD755
100
100
5
50
750
150
–55 to +150
2SD756
120
120
5
50
750
150
–55 to +150
2SD756A
140
140
5
50
750
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
2SD755
2SD756
2SD756A
Item
Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions
Collector to emitter
breakdown voltage
Collector to base
breakdown voltage
V(BR)CEO 100 — — 120 — — 140 — — V IC = 1 mA,
RBE =
V(BR)CBO 100 — — 120 — — 140 — — V IC = 10 µA, IE = 0
Collector cutoff current ICBO
DC current transfer ratio hFE1*1
——
250 —
0.5 — —
1200 250 —
0.5 — —
800 250 —
0.5
500
hFE2 125 — — 125 — — 125 — —
Base to emitter voltage VBE
— — 0.75 —
0.75 — — 0.75
Collector to emitter
saturation voltage
VCE(sat) — — 0.2 — — 0.2 — — 0.2
Gain bandwidth product fT
— 350 — — 350 — — 350 —
Collector output
capacitance
Cob — 1.6 — — 1.6 — — 1.6 —
Note: 1. The 2SD755, 2SD756 and 2SD756A are grouped by hFE1 as follows.
DE
F
µA VCB = 100 V, IE = 0
VCE = 12 V,
IC = 2 mA
VCE = 12 V,
IC = 10 mA
V VCE = 12 V,
IC = 2 mA
V IC = 10 mA,
IB = 1 mA
MHz VCE = 12 V,
IC = 5 mA
pF VCB = 25 V, IE = 0,
f = 1 MHz
2SD755
250 to 500 400 to 800 600 to 1200
2SD756
250 to 500 400 to 800 —
2SD756A 250 to 500 —
2







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