MIO1200-25E10

Advanced Technical Information MIO 1200-25E10 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1200 A VCES = 2500 V VCE(sat) typ. = 2.5 V CC C C' G E' EE E IGBT Symbol VCES VGES IC80 ICM t SC Conditions VGE = 0 V TC = 80°C tp = 1 ms; TC = 80°C V CC = 1800 V; VCEM CHIP = < 2500 V; VGE < 15 V; TVJ < 125°C Maximum Ratings 2500 V ± 20 V 1200 A 2400 A 10 µs Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) ① IC = 1200 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C 2.5 V 3.1 3.4 V VGE(th) IC = 240 mA; VCE = VGE 6 7.5 V ICES VCE = 2500 V; VGE = 0 V; TVJ = 125°C IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C 120 mA 500 nA td(on) t r td(off) t f Eon Eoff Inductive load; TVJ = 125°C; VGE = ±15 V; VCC = 1250V; IC = 1200A; RG = 1.5Ω; Lσ = 100nH 365 250 980 345 1150 1250 ns ns ns ns mJ mJ C ies Coes C res VCE = 25 V; VGE = 0 V; f = 1 MHz Q ge I C = 1200 A; V CE = 1250 V; VGE = ± 15 V RthJC ① Collector emitter saturation voltage is given at chip level 186 nF 13.7 nF 3.0 nF 12.2 µC 0.009 K/W Features NPT³ IGBT - Low-loss - Smooth switching waveforms for good EMC Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance Typical Applications AC power converters for - industrial drives - windmills - traction LASER pulse generator 416 IXYS reserves the right to change ...