IGBT Module. MIO1200-25E10 Datasheet

MIO1200-25E10 Module. Datasheet pdf. Equivalent


Part MIO1200-25E10
Description IGBT Module
Feature Advanced Technical Information MIO 1200-25E10 IGBT Module Single switch Short Circuit SOA Capabili.
Manufacture IXYS
Datasheet
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Advanced Technical Information MIO 1200-25E10 IGBT Module MIO1200-25E10 Datasheet
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MIO1200-25E10
Advanced Technical Information
MIO 1200-25E10
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
IC80 = 1200 A
VCES
= 2500 V
VCE(sat) typ. = 2.5 V
CC C
C'
G
E'
EE
E
IGBT
Symbol
VCES
VGES
IC80
ICM
t
SC
Conditions
VGE = 0 V
TC = 80°C
tp = 1 ms; TC = 80°C
V
CC
=
1800
V;
VCEM
CHIP
=
<
2500
V;
VGE < 15 V; TVJ < 125°C
Maximum Ratings
2500
V
± 20 V
1200
A
2400
A
10 µs
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat)
IC = 1200 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
2.5 V
3.1 3.4 V
VGE(th)
IC = 240 mA; VCE = VGE
6 7.5 V
ICES VCE = 2500 V; VGE = 0 V; TVJ = 125°C
IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C
120 mA
500 nA
td(on)
t
r
td(off)
t
f
Eon
Eoff
Inductive load; TVJ = 125°C; VGE = ±15 V;
VCC = 1250V; IC = 1200A; RG = 1.5Ω; Lσ = 100nH
365
250
980
345
1150
1250
ns
ns
ns
ns
mJ
mJ
C
ies
Coes
C
res
VCE = 25 V; VGE = 0 V; f = 1 MHz
Q
ge
I
C
=
1200
A;
V
CE
=
1250
V;
VGE
=
±
15
V
RthJC
Collector emitter saturation voltage is given at chip level
186 nF
13.7 nF
3.0 nF
12.2 µC
0.009 K/W
Features
• NPT³ IGBT
- Low-loss
- Smooth switching waveforms for
good EMC
• Industry standard package
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
Typical Applications
• AC power converters for
- industrial drives
- windmills
- traction
• LASER pulse generator
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1-6



MIO1200-25E10
Advanced Technical Information
Diode
Symbol
IF80
IFSM
Conditions
Maximum Ratings
TC = 80°C
VR = 0 V; TVJ = 125°C; tp = 10 ms; half-sinewave
1200
11000
A
A
Symbol
Conditions
VF
IF = 1200 A; TVJ = 25°C
TVJ = 125°C
IRM
t
rr
QRR
Erec
VCC = 1250 V; IC = 1200 A;
VGE = ±15 V; RG = 1.5 Ω; TVJ = 125°C
Inductive load; Lσ = 100nH
R
thJC
Forward voltage is given at chip level
Characteristic Values
min. typ. max.
1.75 V
1.8 V
1180
970
1150
990
A
ns
µC
mJ
0.017 K/W
Module
Symbol
TJM
TVJ
Tstg
V
ISOL
M
d
Conditions
max. junction temperature
Operating temperature
Storage temperature
50 Hz
Mounting torque Base-heatsink, M6 screws
Main terminals, M8 screws
Maximum Ratings
+150
-40...+125
-40...+125
°C
°C
°C
5000
V~
4-6
8 - 10
Nm
Nm
Symbol
Conditions
Characteristic Values
min. typ. max.
dA
Clearance distance terminal to base
23
terminal to terminal 19
dS
Surface creepage terminal to base
33
distance
terminal to terminal 33
mm
mm
mm
mm
Lσ
R *)
term-chip
R
thCH
Weight
Module stray inductance, C to E terminal
Resistance terminal to chip
per module; λ grease = 1 W/m•K
10
0.085
0.006
1500
nH
m
K/W
g
*) V = VCE(sat) + R ·term-chip IC resp. V = VF + R ·term-chip IF
MIO 1200-25E10
2-6
© 2004 IXYS All rights reserved







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