IGBT Module. MIO1500-25E10 Datasheet

MIO1500-25E10 Module. Datasheet pdf. Equivalent


Part MIO1500-25E10
Description IGBT Module
Feature Advanced Technical Information MIO 1500-25E10 IGBT Module Single switch Short Circuit SOA Capabili.
Manufacture IXYS
Datasheet
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Advanced Technical Information MIO 1500-25E10 IGBT Module MIO1500-25E10 Datasheet
Recommendation Recommendation Datasheet MIO1500-25E10 Datasheet




MIO1500-25E10
Advanced Technical Information
MIO 1500-25E10
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
IC80 = 1500 A
VCES
= 2500 V
VCE(sat) typ. = 2.7 V
CC C
C'
G
E'
EE
E
IGBT
Symbol
VCES
VGES
IC80
ICM
tSC
Conditions
VGE = 0 V
TC = 80°C
tp = 1 ms; TC = 80°C
VCC = 1700 V; VCEM CHIP = < 2500 V;
VGE < 15 V; TVJ < 125°C
Maximum Ratings
2500
V
± 20 V
1500
A
3000
A
10 µs
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat)
IC = 1500 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
VGE(th)
IC = 240 mA; VCE = VGE
ICES VCE = 2500 V; VGE = 0 V; TVJ = 125°C
IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C
Eon Inductive load; TVJ = 125°C; VGE = ±15 V;
Eoff VCC = 1200V; IC = 1500A; RG = 1.5Ω; Lσ = 100nH
RthJC
Collector emitter saturation voltage is given at chip level
2.7 V
3.3 V
6 7.5 V
100 mA
500 nA
1400
1450
mJ
mJ
0.008 K/W
Features
• NPT³ IGBT
- Low-loss
- Smooth switching waveforms for
good EMC
• Industry standard package
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
Typical Applications
• AC power converters for
- industrial drives
- windmills
- traction
• LASER pulse generator
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1-3



MIO1500-25E10
Advanced Technical Information
Diode
Symbol
IF80
IFSM
Conditions
Maximum Ratings
TC = 80°C
VR = 0 V; TVJ = 125°C; tp = 10 ms; half-sinewave
1500
13000
A
A
Symbol
Conditions
VF
IF = 1500 A; TVJ = 25°C
TVJ = 125°C
I
RM
trr
Q
RR
Erec
VCC = 1200 V; IC = 1500 A;
VGE = ±15 V; RG = 1.5 Ω; TVJ = 125°C
Inductive load; Lσ = 100nH
RthJC
Forward voltage is given at chip level
Characteristic Values
min. typ. max.
2.30 V
2.35 V
1100
1500
925
800
A
ns
µC
mJ
0.016 K/W
Module
Symbol
TJM
TVJ
Tstg
VISOL
M
d
Conditions
max junction temperature
Operating temperature
Storage temperature
50 Hz
Mounting torque Base-heatsink, M6 screws
Main terminals, M8 screws
Maximum Ratings
+150
-40...+125
-40...+125
°C
°C
°C
5000
V~
4-6
8 - 10
Nm
Nm
Symbol
Conditions
Characteristic Values
min. typ. max.
dA
Clearance distance terminal to base
23
terminal to terminal 19
d
Surface creepage terminal to base
33
S
distance
terminal to terminal 33
mm
mm
mm
mm
Lσ
R *term-chip
RthCH
Weight
Module stray inductance, C to E terminal
Resistance terminal to chip
per module; λ grease = 1 W/m•K
10
0.12
0.006
1500
nH
m
K/W
g
*) V = VCE(sat) + R ·term-chip IC resp. V = VF + R ·term-chip IF
MIO 1500-25E10
2-3
© 2004 IXYS All rights reserved







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