IGBT Module. MIO1200-33E10 Datasheet

MIO1200-33E10 Module. Datasheet pdf. Equivalent


Part MIO1200-33E10
Description IGBT Module
Feature MIO 1200-33E10 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1200 A .
Manufacture IXYS
Datasheet
Download MIO1200-33E10 Datasheet


MIO 1200-33E10 IGBT Module Single switch Short Circuit SOA MIO1200-33E10 Datasheet
Recommendation Recommendation Datasheet MIO1200-33E10 Datasheet




MIO1200-33E10
MIO 1200-33E10
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
IC80 = 1200 A
VCES
= 3300 V
VCE(sat) typ. = 3.1 V
CC
C
C'
G
E'
EE
E
IGBT
Symbol
VCES
VGES
IC80
ICM
tSC
Conditions
VGE = 0 V
TC = 80°C
tp = 1 ms; TC = 80°C
VCC = 2500 V; VCEM CHIP = < 3300 V;
VGE < 15 V; TVJ < 125°C
Maximum Ratings
3300
V
± 20 V
1200
A
2400
A
10 µs
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) ‘
IC = 1200 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
3.1 V
3.8 V
VGE(th)
IC = 240 mA; VCE = VGE
6 8V
ICES VCE = 3300 V; VGE = 0 V; TVJ = 125°C
IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C
120 mA
500 nA
td(on)
tr
td(off)
t
f
Eon
Eoff
Inductive load; TVJ = 125°C;
VGE = ±15 V; VCC = 1800 V;
IC = 1200 A; RG = 1.5 Ω;
Lσ = 100 nH
400
200
1070
440
1890
1950
ns
ns
ns
ns
mJ
mJ
Cies
Coes
Cres
VCE = 25 V; VGE = 0 V; f = 1 MHz
Qge IC = 1200 A; VCE = 1800 V; VGE = ± 15 V
RthJC
‘ Collector emitter saturation voltage is given at chip level
187 nF
11.6 nF
2.2 nF
12.1 µC
0.0085 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
Features
• NPT³ IGBT
- Low-loss
- Smooth switching waveforms for
good EMC
• Industry standard package
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
Typical Applications
• AC power converters for
- industrial drives
- windmills
- traction
• LASER pulse generator
20110119a
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MIO1200-33E10
Diode
Symbol
IF80
IFSM
Conditions
Maximum Ratings
TC = 80°C
VR = 0 V; TVJ = 125°C; tp = 10 ms; half-sinewave
1200
11000
A
A
Symbol
Conditions
VF ’
IF = 1200 A; TVJ = 25°C
TVJ = 125°C
IRM
t
rr
QRR
Erec
VCC = 1800 V; IC = 1200 A;
VGE = ±15 V; RG = 1.5 Ω; TVJ = 125°C
Inductive load; Lσ = 100nH
R
thJC
’ Forward voltage is given at chip level
Characteristic Values
min. typ. max.
2.30 V
2.35 V
1350
1450
1280
1530
A
ns
µC
mJ
0.017 K/W
Module
Symbol
TJM
TVJ
Tstg
VISOL
M
d
Conditions
max junction temperature
Operating temperature
Storage temperature
50 Hz
Mounting torque Base-heatsink, M6 screws
Main terminals, M8 screws
Maximum Ratings
+150
-40...+125
-40...+125
°C
°C
°C
6000
V~
4-6
8 - 10
Nm
Nm
Symbol
Conditions
Characteristic Values
min. typ. max.
dA
Clearance distance terminal to base
23
terminal to terminal 19
d
Surface creepage terminal to base
33
S
distance
terminal to terminal 33
mm
mm
mm
mm
Lσ
R *)
term-chip
RthCH
Weight
Module stray inductance, C to E terminal
Resistance terminal to chip
per module; λ grease = 1 W/m·K
10
0.085
0.006
1500
nH
mΩ
K/W
g
*) V = VCE(sat) + R ·term-chip IC resp. V = VF + Rterm-chip · IF
MIO 1200-33E10
© 2011 IXYS All rights reserved
20110119a
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