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MIO1200-33E10

IXYS

IGBT Module


Description
MIO 1200-33E10 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1200 A VCES = 3300 V VCE(sat) typ. = 3.1 V CC C C' G E' EE E phase-out IGBT Symbol VCES VGES IC80 ICM tSC Conditions VGE = 0 V TC = 80°C tp = 1 ms; TC = 80°C VCC = 2500 V; VCEM CHIP = < 3300 V; VGE < 15 V; TVJ < 125°C Maximum Ratings 3300 V ± 20 V 12...



IXYS

MIO1200-33E10

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