IGBT Module. MIO600-65E11 Datasheet

MIO600-65E11 Module. Datasheet pdf. Equivalent


Part MIO600-65E11
Description IGBT Module
Feature MIO 600-65E11 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 600 A VCE.
Manufacture IXYS
Datasheet
Download MIO600-65E11 Datasheet


MIO 600-65E11 IGBT Module Single switch Short Circuit SOA C MIO600-65E11 Datasheet
Recommendation Recommendation Datasheet MIO600-65E11 Datasheet




MIO600-65E11
MIO 600-65E11
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
IC80 = 600 A
VCES = 6500 V
VCE(sat) typ = 4.2 V
CC
C
C' 5 7 9
3
G
2
E'
1 EE E
46
8
IGBT
Symbol
VCES
VGES
IC85
ICM
t
SC
Conditions
VGE = 0 V
TC = 85°C
tp = 1 ms; TC = 85°C
V=
CC
4400
V;
VCEM CHIP
=
<
6500
V;
VGE < 15 V; TVJ < 125°C
Maximum Ratings
6500 V
± 20 V
600 A
1200 A
10 µs
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) ‘
IC = 600 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
4.2 V
5.4 V
VGE(th)
IC = 240 mA; VCE = VGE
6 8V
ICES VCE = 6500 V; VGE = 0 V; TVJ = 125°C
120 mA
IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C
500 nA
t
d(on)
tr
td(off)
tf
Eon
Eoff
Inductive load; TVJ = 125°C;
VGE = ±15 V; VCC = 3600 V;
IC = 600 A; Lσ = 280 nH
RG = 3.9 Ω
RG = 3.9 Ω
RG = 2.7 Ω
RG = 2.7 Ω
RG = 3.9 Ω
RG = 2.7 Ω
620
270
1500
930
4250
3250
ns
ns
ns
ns
mJ
mJ
Cies
Coes
Cres
VCE = 25 V; VGE = 0 V; f = 1 MHz
Qge IC = 600 A; VCE = 3600 V; VGE = ± 15 V
RthJC
‘ Collector emitter saturation voltage is given at chip level
150
7.57
1.46
nF
nF
nF
9.65
µC
0.011 K/W
Features
• NPT³ IGBT
- Low-loss
- Smooth switching waveforms for
good EMC
• Industry standard package
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
Typical Applications
• AC power converters for
- industrial drives
- windmills
- traction
• LASER pulse generator
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110119a
1-5



MIO600-65E11
Diode
Symbol
IF80
IFSM
Conditions
Maximum Ratings
TC = 80°C
VR = 0 V; TVJ = 125°C; tp = 10 ms; half-sinewave
600
6000
A
A
Symbol
Conditions
VF ’
IF = 600 A;
TVJ = 25°C
TVJ = 125°C
IRM
t
VCC = 3600 V; IC = 600 A;
rr
QRR
Erec
VGE = ±15 V; RG = 3.9 Ω; TVJ = 125°C
Inductive load; Lσ = 280 nH
R
thJC
’ Forward voltage is given at chip level
Characteristic Values
min. typ. max.
3.2 V
3.4 V
930
2200
1150
2100
A
ns
µC
mJ
0.021 K/W
Symbol
T
JM
TVJ
T
stg
V
ISOL
Md
Conditions
Maximum Ratings
max junction temperature
Operatingtemperature
Storage temperature
+125
-40...+125
-40...+125
°C
°C
°C
50 Hz, 1 min
10200 V~
Mounting torque Base-heatsink, M6 screws
Main terminals, M8 screws
Auxiliary terminals, M4 screws
4 - 6 Nm
8 - 10 Nm
2 - 3 Nm
Symbol
dA
dS
VE
CTI
Lσ
R *term-chip
RthCH
Weight
Conditions
Characteristic Values
min. typ. max.
Clearance distance terminal to base
IEC60664-1/EN50124-1 terminal to terminal
Surface creepage dist. terminal to base
IEC60664-1/EN50124-1 terminal to terminal
40
26
64
56
mm
mm
mm
mm
Partial discharge extinction voltage
f
=
50
Hz,
Q
PD
10pC
(IEC
61287)
Comperative tracking index
5100
600
V
Module stray inductance, C to E terminal
18 nH
Resistance terminal to chip
0.12 mΩ
per module; λ grease = 1 W/m•K
0.006
K/W
1760
g
MIO 600-65E11
© 2011 IXYS All rights reserved
20110119a
2-5







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