IGBT Module. MKI75-06A7T Datasheet

MKI75-06A7T Module. Datasheet pdf. Equivalent


Part MKI75-06A7T
Description IGBT Module
Feature MKI 75-06 A7 MKI 75-06 A7T IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA IC25 = .
Manufacture IXYS
Datasheet
Download MKI75-06A7T Datasheet


MKI 75-06 A7 MKI 75-06 A7T IGBT Modules H-Bridge Short Circ MKI75-06A7T Datasheet
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MKI75-06A7T
MKI 75-06 A7
MKI 75-06 A7T
IGBT Modules
H-Bridge
Short Circuit SOA Capability
Square RBSOA
IC25 = 90 A
VCES = 600 V
VCE(sat) =typ. 2.1 V
Type:
MKI 75-06 A7
MKI 75-06 A7T
NTC - Option:
without NTC
with NTC
13
T1 D1 T5 D5
1
T
9
2 10
16
14
T T2 D2 T6 D6
3 11
4 12
17
IGBTs
Symbol
VCES
VGES
IC25
IC80
RBSOA
t
SC
(SCSOA)
Ptot
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600 V
± 20 V
TC = 25°C
TC = 80°C
90
60
VGE = ±15 V; RG = 18 ; TVJ = 125°C
Clamped inductive load; L = 100 µH
ICM = 120
VCEK VCES
V
CE
=
V;
CES
VGE
=
±15
V;
R
G
=
18
;
TVJ
=
125°C
non-repetitive
10
A
A
A
µs
TC = 25°C
280 W
Symbol
VCE(sat)
V
GE(th)
ICES
IGES
t
d(on)
tr
td(off)
tf
Eon
Eoff
Cies
QGon
R
thJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 75 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
I = 1.5 mA; V = V
C GE CE
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 75 A
VGE = ±15 V; RG = 18
2.1 2.6 V
2.5 V
4.5 6.5 V
1.3 mA
0.9 mA
200 nA
50 ns
50 ns
270 ns
40 ns
3.5 mJ
2.5 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 300V; VGE = 15 V; IC = 75 A
(per IGBT)
3200
190
pF
nC
0.44 K/W
B3
Features
• NPT IGBT technology
• low saturation voltage
• low switching losses
• switching frequency up to 30 kHz
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient for
easy parallelling
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• package with copper base plate
• UL registered, E 72873
Advantages
• space savings
• reduced protection circuits
• package designed for wave soldering
Typical Applications
• motor control
- DC motor armature winding
- DC motor excitation winding
- synchronous motor excitation winding
• supply of transformer primary winding
- power supplies
- welding
- X-ray
- UPS
- battery charger
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
1-4



MKI75-06A7T
MKI 75-06 A7
MKI 75-06 A7T
Diodes
Symbol
IF25
IF80
Conditions
TC = 25°C
TC = 80°C
Maximum Ratings
140 A
85 A
Equivalent Circuits for Simulation
Conduction
Symbol
VF
IRM
trr
RthJC
Module
Symbol
TVJ
Tstg
V
ISOL
Md
Conditions
IF = 75 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
IF = 60 A; diF/dt = -500 A/µs; TVJ = 125°C
VR = 300 V; VGE = 0 V
(per diode)
Characteristic Values
min. typ. max.
1.8 2.1 V
1.3 V
28 A
100 ns
0.61 K/W
Conditions
I
ISOL
1
mA;
50/60
Hz
Mounting torque (M5)
Maximum Ratings
-40...+150
-40...+125
°C
°C
2500
V~
2.7 - 3.3
Nm
Symbol
Rpin-chip
dS
d
A
RthCH
Weight
Conditions
Creepage distance on surface
Strike distance in air
with heatsink compound
Characteristic Values
min. typ. max.
5 m
6 mm
6 mm
0.02 K/W
180 g
Temperature Sensor NTC
Symbol
Conditions
R
25
B25/50
T = 25°C
Dimensions in mm (1 mm = 0.0394")
Characteristic Values
min. typ. max.
4.75 5.0 5.25 k
3375
K
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 0.95 V; R0 = 20 m
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.014 V; R0 = 4 m
Thermal Response
B3
IGBT (typ.)
Cth1 = 0.248 J/K; Rth1 = 0.343 K/W
Cth2 = 1.849 J/K; Rth2 = 0.097 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.23 J/K; Rth1 = 0.483 K/W
Cth2 = 1.3 J/K; Rth2 = 0.127 K/W
© 2005 IXYS All rights reserved
2-4







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