MKI100-12F8

Advanced Technical Information MKI 100-12F8 IGBT Modules H Bridge Short Circuit SOA Capability Square RBSOA IC25 = 125 A V CES = 1200 V VCE(sat) typ. = 3.3 V IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK t SC Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Eon Eoff Cies QGon R thJC 13, 21 1 2 3 4 14, 20 9 10 19 15 11 12 MKI Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 ± 20 V V TC = 25°C TC = 80°C VGE = ±15 V; RG = 5.6 Ω; TVJ = 125°C RBSOA; clamped inductive load; L = 100 µH V CE = 900 V; VGE = ±15 V; R G = 5.6 Ω; TVJ = 125°C SCSOA; non-repetitive 125 85 200 VCES 10 A A A µs TC = 25°C 640 W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 100 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C I = 4 mA; V = V C GE CE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 100 A V GE = ±15 V; R G = 5.6 Ω 3.3 4.0 4.5 4.0 130 60 365 30 12.0 5.0 3.9 V V 6.5 V 1.3 mA mA 600 nA ns ns ns ns mJ mJ VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = ±15 V; IC = 100 A (per IGBT) 6.5 nF 1.1 µC 0.19 K/W Features Fast NPT IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current Industry Standard Package - sol...