IGBT Module. MKI100-12F8 Datasheet

MKI100-12F8 Module. Datasheet pdf. Equivalent


Part MKI100-12F8
Description IGBT Module
Feature Advanced Technical Information MKI 100-12F8 IGBT Modules H Bridge Short Circuit SOA Capability Squ.
Manufacture IXYS
Datasheet
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Advanced Technical Information MKI 100-12F8 IGBT Modules H MKI100-12F8 Datasheet
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MKI100-12F8
Advanced Technical Information
MKI 100-12F8
IGBT Modules
H Bridge
Short Circuit SOA Capability
Square RBSOA
IC25 = 125 A
V
CES
= 1200 V
VCE(sat) typ. = 3.3 V
IGBTs
Symbol
VCES
VGES
IC25
IC80
ICM
VCEK
t
SC
Ptot
Symbol
VCE(sat)
V
GE(th)
ICES
IGES
t
d(on)
tr
td(off)
tf
Eon
Eoff
Cies
QGon
R
thJC
13, 21
1
2
3
4
14, 20
9
10
19
15
11
12
MKI
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
± 20
V
V
TC = 25°C
TC = 80°C
VGE = ±15 V; RG = 5.6 ; TVJ = 125°C
RBSOA; clamped inductive load; L = 100 µH
V
CE
=
900
V;
VGE
=
±15
V;
R
G
=
5.6
;
TVJ
=
125°C
SCSOA; non-repetitive
125
85
200
VCES
10
A
A
A
µs
TC = 25°C
640 W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 100 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
I = 4 mA; V = V
C GE CE
VCE = VCES;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 100 A
V
GE
=
±15
V;
R
G
=
5.6
3.3
4.0
4.5
4.0
130
60
365
30
12.0
5.0
3.9 V
V
6.5 V
1.3 mA
mA
600 nA
ns
ns
ns
ns
mJ
mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = ±15 V; IC = 100 A
(per IGBT)
6.5 nF
1.1 µC
0.19 K/W
Features
• Fast NPT IGBTs
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance also in resonant circuits
• HiPerFREDTM diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
• Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
Typical Applications
- motor control
. DC motor amature winding
. DC motor excitation winding
. synchronous motor excitation winding
- supply of transformer primary winding
. power supplies
. welding
. X-ray
. battery charger
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
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MKI100-12F8
Advanced Technical Information
MKI 100-12F8
Diodes
Symbol
IF25
IF80
Conditions
TC = 25°C
TC = 80°C
Maximum Ratings
200 A
130 A
Equivalent Circuits for Simulation
Conduction
Symbol
VF
IRM
trr
RthJC
Conditions
Characteristic Values
min. typ. max.
IF = 100 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
IF = 120 A; diF/dt = -750 A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
(per diode)
2.3 2.6 V
1.7 V
82 A
200 ns
0.3 K/W
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 2.05 V ; R0 = 19.5 m
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.27 V; R0 = 4.3 m
Thermal Response
Module
Symbol
TVJ
TJM
Tstg
VISOL
Md
Symbol
Conditions
operating
IISOL 1 mA; 50/60 Hz
Mounting torque (M5)
Conditions
Rpin-chip
dS
dA
R
thCH
Weight
Creepage distance on surface
Strike distance in air
with heatsink compound
Maximum Ratings
-40...+125
+150
-40...+125
°C
°C
°C
2500
V~
3-6
Nm
Characteristic Values
min. typ. max.
1.8 m
10 mm
10 mm
0.01 K/W
300 g
IGBT (typ.)
Cth1 = 0.409 J/K; Rth1 = 0.14 K/W
Cth2 = 2.203 J/K; Rth2 = 0.05 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.301 J/K; Rth1 = 0.24 K/W
Cth2 = 2.005 J/K; Rth2 = 0.062 K/W
Dimensions in mm (1 mm = 0.0394")
pins 5, 6, 7, 8 and 17 for MWI only
© 2004 IXYS All rights reserved
2-2







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