IGBT Module. MKI75-12E8 Datasheet

MKI75-12E8 Module. Datasheet pdf. Equivalent


Part MKI75-12E8
Description IGBT Module
Feature MWI 75-12 E8 MKI 75-12 E8 IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA .
Manufacture IXYS
Datasheet
Download MKI75-12E8 Datasheet


MWI 75-12 E8 MKI 75-12 E8 IGBT Modules Sixpack, H Bridge Sh MKI75-12E8 Datasheet
Recommendation Recommendation Datasheet MKI75-12E8 Datasheet




MKI75-12E8
MWI 75-12 E8
MKI 75-12 E8
IGBT Modules
Sixpack, H Bridge
Short Circuit SOA Capability
Square RBSOA
IC25 = 130 A
VCES
= 1200 V
VCE(sat) typ. = 2.0 V
IGBTs
Symbol
VCES
VGES
IC25
IC80
ICM
VCEK
t
SC
Ptot
Symbol
VCE(sat)
V
GE(th)
ICES
IGES
t
d(on)
tr
td(off)
tf
Eon
Eoff
Cies
QGon
R
thJC
13, 21
1
2
3
4
14, 20
59
6 10
7 11
8 12
MWI
13, 21
1
2
19
17
15
3
4
14, 20
9
10
11
12
MKI
19
15
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
± 20
V
V
TC = 25°C
TC = 80°C
VGE = ±15 V; RG = 15 Ω; TVJ = 125°C
RBSOA; clamped inductive load; L = 100 µH
V
CE
=
900
V;
VGE
=
±15
V;
R
G
=
15
Ω;
TVJ
=
125°C
SCSOA; non-repetitive
130
90
150
VCES
10
A
A
A
µs
TC = 25°C
500 W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 75 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
I = 3 mA; V = V
C GE CE
VCE = VCES;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 75 A
V
GE
=
±15
V;
R
G
=
15
Ω
2.0 2.5 V
2.2 V
4.5 6.5 V
1.1 mA
1.1 mA
400 nA
150 ns
60 ns
680 ns
50 ns
9 mJ
7.5 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 100 A
(per IGBT)
5.7 nF
0.58 µC
0.25 K/W
E72873
See outline drawing for pin arrangement
Features
• NPT3 IGBTs
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance also in resonant circuits
• HiPerFREDTM diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
• Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
Typical Applications
• MWI
- AC drives
- power supplies with power factor
correction
• MKI
- motor control
. DC motor amature winding
. DC motor excitation winding
. synchronous motor excitation winding
- supply of transformer primary winding
. power supplies
. welding
. X-ray
. battery charger
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20070912a
1-4



MKI75-12E8
MWI 75-12 E8
MKI 75-12 E8
Diodes
Symbol
IF25
IF80
Conditions
TC = 25°C
TC = 80°C
Maximum Ratings
150 A
100 A
Equivalent Circuits for Simulation
Conduction
Symbol
VF
IRM
trr
RthJC
Module
Symbol
TVJ
TJM
Tstg
VISOL
Md
Symbol
R
pin-chip
dS
dA
RthCH
Weight
Conditions
IF = 75 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
IF = 75 A; diF/dt = -750 A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
(per diode)
Characteristic Values
min. typ. max.
2.2 2.6 V
1.6 V
79 A
220 ns
0.41 K/W
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 0.95 V; R0 = 17 mΩ
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.2 V; R0 = 6 mΩ
Thermal Response
Conditions
operating
IISOL 1 mA; 50/60 Hz
Mounting torque (M5)
Conditions
Creepage distance on surface
Strike distance in air
with heatsink compound
Maximum Ratings
-40...+125
+150
-40...+125
°C
°C
°C
2500
V~
3-6
Nm
Characteristic Values
min. typ. max.
1.8 mΩ
10 mm
10 mm
0.01 K/W
300 g
IGBT (typ.)
Cth1 = 0.294 J/K; Rth1 = 0.184 K/W
Cth2 = 1.789 J/K; Rth2 = 0.064 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.227 J/K; Rth1 = 0.321 K/W
Cth2 = 1.328 J/K; Rth2 = 0.089 K/W
Dimensions in mm (1 mm = 0.0394")
pins 5, 6, 7, 8 and 17 for MWI only
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20070912a
2-4







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