IGBT Module. MID100-12A3 Datasheet

MID100-12A3 Module. Datasheet pdf. Equivalent


Part MID100-12A3
Description IGBT Module
Feature IGBT (NPT) Module Boost Chopper + free wheeling Diode Part number MID100-12A3 MID100-12A3 VCES I C.
Manufacture IXYS
Datasheet
Download MID100-12A3 Datasheet


MII 100-12 A3 MID 100-12 A3 MDI 100-12 A3 IGBT Modules Sho MID100-12A3 Datasheet
IGBT (NPT) Module Boost Chopper + free wheeling Diode Part n MID100-12A3 Datasheet
Recommendation Recommendation Datasheet MID100-12A3 Datasheet




MID100-12A3
IGBT (NPT) Module
Boost Chopper + free wheeling Diode
Part number
MID100-12A3
MID100-12A3
VCES
I C25
VCE(sat)
=
=
=
1200 V
135 A
2.2 V
4
5
Features / Advantages:
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
Backside: isolated
1
3
2
Applications:
AC motor drives
Solar inverter
Medical equipment
Uninterruptible power supply
Air-conditioning systems
Welding equipment
Switched-mode and resonant-mode
power supplies
Inductive heating, cookers
Pumps, Fans
Package: Y4
Isolation Voltage: 3600 V~
Industry standard outline
RoHS compliant
Soldering pins for PCB mounting
Base plate: DCB ceramic
Reduced weight
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131206a



MID100-12A3
MID100-12A3
Free Wheeling Diode FWD
Symbol
VRSM
VRRM
IR
VF
I FAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
average forward current
VR = 1200 V
VR = 1200 V
IF = 75 A
IF = 150 A
IF = 75 A
IF = 150 A
TC = 80°C
DC current
d=1
VF0
rF
R thJC
R thCH
Ptot
I FSM
CJ
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
t = 10 ms; (50 Hz), sine; VR = 0 V
VR = 600 V f = 1 MHz
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
TVJ = 150°C
Ratings
min. typ. max.
1200
1200
1
3
2.50
2.90
1.80
2.10
75
Unit
V
V
mA
mA
V
V
V
V
A
TVJ = 150°C
TC =
TVJ =
TVJ =
25°C
45°C
25°C
1.30 V
7.5 m
0.45 K/W
0.45 K/W
280 W
700 A
30 pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131206a







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