IGBT Module. MDI550-12A4 Datasheet

MDI550-12A4 Module. Datasheet pdf. Equivalent


Part MDI550-12A4
Description IGBT Module
Feature MID 550-12 A4 MDI 550-12 A4 IGBT Modules Short Circuit SOA Capability Square RBSOA I = 670 A C25 .
Manufacture IXYS
Datasheet
Download MDI550-12A4 Datasheet


MID 550-12 A4 MDI 550-12 A4 IGBT Modules Short Circuit SOA MDI550-12A4 Datasheet
Recommendation Recommendation Datasheet MDI550-12A4 Datasheet




MDI550-12A4
MID 550-12 A4
MDI 550-12 A4
IGBT Modules
Short Circuit SOA Capability
Square RBSOA
I = 670 A
C25
V
CES
= 1200 V
V = 2.3 V
CE(sat) typ.
MID
3
MDI
3
8
19
1
3
2
1
11
10
9
8
11
10 2
2
E 72873
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC80
ICM
tSC
(SCSOA)
RBSOA
Ptot IGBT
TJ
Tstg
VISOL
Md
Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 20 kW
Continuous
Transient
TC = 25°C
TC = 80°C
TC = 80°C, tp = 1 ms 
VGE = ±15 V, VCE = VCES, TJ = 125°C
RG = 1.8 W, non repetitive
VGE= ±15 V, TJ = 125°C, RG = 1.8 W
Clamped inductive load, L = 100 mH
TC = 25°C
50/60 Hz, RMS t = 1 min
IISOL £ 1 mA
t=1s
Insulating material: Al2O3
Mounting torque (module)
(teminals)
dS
dA
a
Weight
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
Typical
Data according to a single IGBT/FRED unless otherwise stated.
 Additional current limitation by external leads
Maximum Ratings
1200
1200
±20
±30
670
460
920
10
V
V
V
V
A
A
A
ms
ICM = 800
VCEK < VCES
2750
150
-40 ... +150
4000
4800
A
W
°C
°C
V~
V~
2.25-2.75
20-25
2.5-3.7
22-33
14
9.6
50
250
8.8
Nm
lb.in.
Nm
lb.in.
mm
mm
m/s2
g
oz.
Features
q NPT IGBT technology
q low saturation voltage
q low switching losses
q switching frequency up to 30 kHz
q square RBSOA, no latch up
q high short circuit capability
q positive temperature coefficient for
easy parallelling
q MOS input, voltage controlled
q ultra fast free wheeling diodes
q package with DCB ceramic base plate
q isolation voltage 4800 V
q UL registered E72873
Advantages
q space and weight savings
q reduced protection circuits
Typical Applications
q AC and DC motor control
q power supplies
q welding inverters
© 2000 IXYS All rights reserved
1-4



MDI550-12A4
MID 550-12 A4
MDI 550-12 A4
Symbol
V(BR)CES
VGE(th)
ICES
IGES
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
RthJC
RthJS
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGE = 0 V
IC = 16 mA, VCE = VGE
VCE = VCES
VCE = 0 V, VGE = ±20 V
IC = 400 A, VGE = 15 V
TJ = 25°C
TJ = 125°C
VCE = 25 V, VGE = 0 V, f = 1 MHz
Inductive load, TJ = 125°C
IC = 400 A, VGE = ±15 V
VCE = 600 V, RG = 1.8 W
with heatsink compound
1200
V
4.5 6.5 V
21 mA
30 mA
1.6 µA
2.3 2.8 V
26 nF
4 nF
2 nF
100 ns
60 ns
600 ns
90 ns
64 mJ
59 mJ
0.05 K/W
0.09 K/W
Dimensions in mm (1 mm = 0.0394")
Free Wheeling Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IF
IRM
trr
RthJC
RthJS
IF = 400 A, VGE = 0 V
IF = 400 A, VGE = 0 V, TJ = 125°C
TC = 25°C 
TC = 80°C
IF = 400 A, VGE = 0 V, -diF/dt = 3000 A/ms
TJ = 125°C, VR = 600 V
2.4 2.6 V
1.9 2.0 V
750 A
460 A
300 A
200 ns
0.09 K/W
0.18 K/W
Anti Parallel Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF IF = 100 A, VGE = 0 V
IF = 100 A, VGE = 0 V, TJ = 125°C
IF TC = 25°C
TC = 80°C
IRM IF = 100 A, VGE = 0 V, -diF/dt = 600 A/ms
trr TJ = 125°C, VR = 600 V
RthJC
RthJS
 Additional current limitation by external leads
2.4 2.6 V
1.9 2.0 V
150 A
95 A
62 A
200 ns
0.45 K/W
0.9 K/W
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.3 V; R0 = 3.2 mW
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.3 V; R0 = 1.5 mW
Thermal Response
IGBT (typ.)
Cth1 = 0.90 J/K; Rth1 = 0.049 K/W
Cth2 = 2.07 J/K; Rth2 = 0.001 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.71 J/K; Rth1 = 0.090 K/W
Cth2 = 1.30 J/K; Rth2 = 0.002 K/W
© 2000 IXYS All rights reserved
2-4







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)