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VID25-06P1 Dataheets PDF



Part Number VID25-06P1
Manufacturers IXYS
Logo IXYS
Description IGBT Modules
Datasheet VID25-06P1 DatasheetVID25-06P1 Datasheet (PDF)

VDI 25-06P1 VII 25-06P1 VID 25-06P1 VIO 25-06P1 IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA IC25 = 24.5 A VCES = 600 V V =CE(sat) typ. 2.4 V Preliminary data sheet VIO A1 S18 IJK 10 VII P9 L9 X13 E2 NTC G10 X15 K10 X18 X16 AC1 VID X15 L9 NTC X16 F1 SV18 IK10 VDI X15 L9 NTC X16 T16 AC1 B3 Pin arangement see outlines IK10 PS18 LMNNot for new design 9 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Conditions Maximum Ratings TVJ = 25°C to 150°.

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VDI 25-06P1 VII 25-06P1 VID 25-06P1 VIO 25-06P1 IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA IC25 = 24.5 A VCES = 600 V V =CE(sat) typ. 2.4 V Preliminary data sheet VIO A1 S18 IJK 10 VII P9 L9 X13 E2 NTC G10 X15 K10 X18 X16 AC1 VID X15 L9 NTC X16 F1 SV18 IK10 VDI X15 L9 NTC X16 T16 AC1 B3 Pin arangement see outlines IK10 PS18 LMNNot for new design 9 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Conditions Maximum Ratings TVJ = 25°C to 150°C 600 ± 20 V V TC = 25°C TC = 80°C VGE = ±15 V; RG = 68 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 68 Ω; TVJ = 125°C non-repetitive 24.5 17 30 VCES 10 A A A µs TC = 25°C 82 W Symbol Conditions Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. max. VCE(sat) IC = 25 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C 2.4 2.9 VGE(th) IC = 0.4 mA; VGE = VCE 4.5 I CES V =V ; CE CES V = 0 V; GE TVJ = 25°C TVJ = 125°C IGES VCE = 0 V; VGE = ± 20 V td(on) tr td(off) t f Eon E off Inductive load, TVJ = 125°C VCE = 300 V; IC = 15 A V = 15/0 V; R = 68 Ω GE G 30 45 270 40 0.7 0.5 Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 8 RthJC RthJH (per IGBT) with heatsink compound (0.42 K/m.K; 50 µm) 3 IXYS reserves the right to change limits, test conditions and dimensions. 2.9 V V 6.5 V 0.6 mA 2.7 mA 100 nA ns ns ns ns mJ mJ nF 1.52 K/W K/W © 2006 IXYS All rights reserved Features • NPT IGBT's - positive temperature coefficient of saturation voltage - fast switching • FRED diodes - fast reverse recovery - low forward voltage • Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plate Advantages • space and weight savings • reduced protection circuits • leads with expansion bend for stress relief Typical Applications • AC and DC motor control • AC servo and robot drives • power supplies • welding inverters Recommended replacement: Please contact your local sales office 1-4 0650 VDI 25-06P1 VII 25-06P1 VID 25-06P1 VIO 25-06P1 Reverse diodes (FRED) Symbol Conditions IF25 TC = 25°C IF80 TC = 80°C Maximum Ratings 18.5 A 12.0 A Symbol VF IRM trr RthJC RthJH Conditions IF = 15 A; TVJ = 25°C TVJ = 125°C IF = 10 A; diF/dt = 400 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V with heatsink compound (0.42 K/m.K; 50 µm) Characteristic Values min. typ. max. 2.58 2.64 V 1.8 V 7A 70 ns 3.5 K/W 7 K/W Temperature Sensor NTC Symbol Conditions R25 B25/50 T = 25°C Characteristic Values min. typ. max. 4.75 5.0 5.25 kΩ 3375 K Module Symbol T VJ Tstg VISOL Md a Conditions IISOL ≤ 1 mA; 50/60 Hz mounting torque (M4) Max. allowable acceleration Maximum Ratings -40...+150 -40...+150 3000 1.5 - 2.0 14 - 18 50 °C °C V~ Nm lb.in. m/s2 VII VIO Symbol dS dA Weight Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Characteristic Values min. typ. max. 11.2 mm 11.2 mm 24 g VID VDI B3 Not for new design 0650 Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 2-4 50 A 40 IC 30 VGE= 17V 15V 13V 11V 20 TJ = 25°C 10 9V 14T60 0 0 1 2 3 4 V5 VCE Fig. 1 Typ. output characteristics VDI 25-06P1 VII 25-06P1 VID 25-06P1 VIO 25-06P1 50 A IC 40 30 20 VGE= 17V 15V 13V 11V TJ = 125°C 10 9V 14T60 0 0 1 2 3 4 V5 VCE Fig. 2 Typ. output characteristics B3 Not for new design 0650 50 A 40 IC 30 20 10 0 4 TJ = 125°C 68 VCE = 20V TJ = 25°C 10 12 VGE 14T60 14 V 16 Fig. 3 Typ. transfer characteristics 50 A 40 IF 30 20 TJ = 125°C TJ = 25°C 10 14T60 0 0 1 2 V3 VF Fig. 4 Typ. forward characteristics of free wheeling diode 20 V VGE 15 10 VCE = 300V IC = 15A 5 0 0 20 40 60 QG Fig. 5 Typ. turn on gate charge 14T60 nC 80 IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 40 A 30 IRM 20 trr TJ = 125°C VR = 300V IF = 15A 120 ns 90 60 10 30 IRM 0 014T60 0 200 400 600 8A00/μs 1000 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 3-4 VDI 25-06P1 VII 25-06P1 VID 25-06P1 VIO 25-06P1 Not for new design 0650 3 VCE = 300V mJ VGE = ±15V RG = 68Ω 2 TVJ = 125°C td(on) tr 60 ns 40 t 1 20 Eon 14T60 00 0 10 20 30 A IC Fig. 7 Typ. turn on energy and switching 2,0 VCE = 300V mJ VGE = ±15V 1,5 IC = 15A TVJ = 125°C 1,0 0,5 td(on) Eon tr 60 ns 45 t 30 15 0,0 0 14T60 0 20 40 60 80 100 Ω 120 RG Fig. 9 Typ. turn on energy and switching 40 A 30 20 10 RG = 68 Ω TVJ = 125°C 0 14T60 0 100 200 300 400 500 600 700 V V Fig. 11 Reverse biased safe operating area 2,0 mJ Eoff 1,5 td(off) VCE = 300V VGE = ±15V RG = 68Ω TVJ = 125°C 400 ns 300 t 1,0 200 Eoff 0,5 0,0 0 Fig. 8 100 tf 14T60 0 10 20 30 A IC Typ. turn off energy and switching times versus collector current B3 0,8 mJ Eoff 0,6 VCE = 300V VGE = ±15V IC = 15A TVJ = 125°C 0,4 400 td(off) Eoff ns 300 t .


VII25-06P1 VID25-06P1 VIO25-06P1


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