Document
VDI 25-06P1 VII 25-06P1 VID 25-06P1 VIO 25-06P1
IGBT Modules in ECO-PAC 2
Short Circuit SOA Capability Square RBSOA
IC25 = 24.5 A
VCES
= 600 V
V =CE(sat) typ. 2.4 V
Preliminary data sheet
VIO
A1 S18
IJK 10
VII
P9 L9
X13 E2 NTC
G10 X15
K10
X18 X16
AC1
VID
X15 L9
NTC X16
F1
SV18 IK10
VDI
X15 L9
NTC X16
T16
AC1
B3
Pin arangement see outlines
IK10 PS18
LMNNot for new design 9
IGBTs
Symbol
VCES
VGES
IC25 IC80
ICM VCEK
tSC (SCSOA)
Ptot
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600 ± 20
V V
TC = 25°C TC = 80°C
VGE = ±15 V; RG = 68 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH
VCE = VCES; VGE = ±15 V; RG = 68 Ω; TVJ = 125°C non-repetitive
24.5 17
30 VCES
10
A A A
µs
TC = 25°C
82 W
Symbol
Conditions
Characteristic Values
(T = 25°C, unless otherwise specified) VJ min. typ. max.
VCE(sat)
IC = 25 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C
2.4 2.9
VGE(th)
IC = 0.4 mA; VGE = VCE
4.5
I
CES
V =V ; CE CES
V = 0 V; GE
TVJ =
25°C
TVJ = 125°C
IGES VCE = 0 V; VGE = ± 20 V
td(on) tr td(off) t
f
Eon E
off
Inductive load, TVJ = 125°C VCE = 300 V; IC = 15 A V = 15/0 V; R = 68 Ω
GE G
30 45 270 40 0.7 0.5
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz
8
RthJC RthJH
(per IGBT) with heatsink compound (0.42 K/m.K; 50 µm)
3
IXYS reserves the right to change limits, test conditions and dimensions.
2.9 V V
6.5 V
0.6 mA 2.7 mA
100 nA
ns ns ns ns mJ mJ
nF
1.52 K/W K/W
© 2006 IXYS All rights reserved
Features • NPT IGBT's
- positive temperature coefficient of saturation voltage
- fast switching • FRED diodes
- fast reverse recovery - low forward voltage • Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plate Advantages • space and weight savings • reduced protection circuits • leads with expansion bend for stress relief Typical Applications • AC and DC motor control • AC servo and robot drives • power supplies • welding inverters
Recommended replacement: Please contact your local sales office
1-4
0650
VDI 25-06P1 VII 25-06P1 VID 25-06P1 VIO 25-06P1
Reverse diodes (FRED)
Symbol
Conditions
IF25 TC = 25°C IF80 TC = 80°C
Maximum Ratings
18.5 A 12.0 A
Symbol
VF
IRM trr RthJC RthJH
Conditions
IF = 15 A; TVJ = 25°C TVJ = 125°C
IF = 10 A; diF/dt = 400 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
Characteristic Values min. typ. max.
2.58 2.64 V 1.8 V
7A 70 ns
3.5 K/W 7 K/W
Temperature Sensor NTC
Symbol
Conditions
R25 B25/50
T = 25°C
Characteristic Values min. typ. max.
4.75 5.0 5.25 kΩ
3375
K
Module Symbol
T VJ
Tstg VISOL Md
a
Conditions
IISOL ≤ 1 mA; 50/60 Hz mounting torque (M4) Max. allowable acceleration
Maximum Ratings
-40...+150 -40...+150
3000
1.5 - 2.0 14 - 18 50
°C °C
V~
Nm lb.in. m/s2
VII VIO
Symbol
dS dA Weight
Conditions
Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink)
Characteristic Values min. typ. max.
11.2 mm 11.2 mm
24 g
VID VDI
B3
Not for new design
0650
Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
2-4
50 A 40 IC
30
VGE= 17V 15V 13V
11V
20
TJ = 25°C
10
9V
14T60
0 0 1 2 3 4 V5 VCE
Fig. 1 Typ. output characteristics
VDI 25-06P1 VII 25-06P1 VID 25-06P1 VIO 25-06P1
50
A IC 40
30
20
VGE= 17V 15V 13V
11V
TJ = 125°C 10
9V
14T60
0 0 1 2 3 4 V5
VCE
Fig. 2 Typ. output characteristics
B3
Not for new design
0650
50
A 40 IC 30
20
10
0 4
TJ = 125°C
68
VCE = 20V
TJ = 25°C
10 12 VGE
14T60
14 V 16
Fig. 3 Typ. transfer characteristics
50 A 40 IF 30
20
TJ = 125°C
TJ = 25°C
10
14T60
0 0 1 2 V3 VF
Fig. 4 Typ. forward characteristics of free wheeling diode
20 V VGE 15
10
VCE = 300V IC = 15A
5
0 0 20 40 60
QG
Fig. 5 Typ. turn on gate charge
14T60
nC 80
IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved
40 A 30 IRM
20
trr
TJ = 125°C VR = 300V IF = 15A
120 ns 90
60
10 30
IRM
0 014T60 0 200 400 600 8A00/μs 1000 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode
3-4
VDI 25-06P1 VII 25-06P1 VID 25-06P1 VIO 25-06P1
Not for new design
0650
3
VCE = 300V
mJ
VGE = ±15V RG = 68Ω
2 TVJ = 125°C
td(on) tr
60 ns
40 t
1 20 Eon
14T60
00 0 10 20 30 A IC
Fig. 7 Typ. turn on energy and switching
2,0
VCE = 300V mJ VGE = ±15V
1,5 IC = 15A
TVJ = 125°C
1,0
0,5
td(on)
Eon tr
60 ns 45
t
30
15
0,0 0
14T60 0 20 40 60 80 100 Ω 120
RG
Fig. 9 Typ. turn on energy and switching
40 A 30
20
10
RG = 68 Ω
TVJ = 125°C
0
14T60
0 100 200 300 400 500 600 700 V
V
Fig. 11 Reverse biased safe operating area
2,0 mJ Eoff 1,5
td(off)
VCE = 300V VGE = ±15V RG = 68Ω TVJ = 125°C
400
ns 300
t
1,0 200 Eoff
0,5
0,0 0
Fig. 8
100 tf
14T60 0 10 20 30 A
IC
Typ. turn off energy and switching times versus collector current
B3
0,8 mJ Eoff 0,6
VCE = 300V VGE = ±15V IC = 15A TVJ = 125°C
0,4
400
td(off) Eoff
ns 300
t
.