IGBT Modules
VDI 25-12P1 VII 25-12P1 VID 25-12P1 VIO 25-12P1
IGBT Modules in ECO-PAC 2
Short Circuit SOA Capability Square RBSOA
Pr...
Description
VDI 25-12P1 VII 25-12P1 VID 25-12P1 VIO 25-12P1
IGBT Modules in ECO-PAC 2
Short Circuit SOA Capability Square RBSOA
Preliminary data sheet
VIO
A1 S18
IJK 10
VII
P9 L9
X13 E2 NTC
G10 X15
K10
X18 X16
VID
X15 L9
NTC X16
F1
AC1
SV18 IK10
IC25 = 30 A
VCES
= 1200 V
V =CE(sat) typ. 2.6 V
VDI
X15 L9
NTC X16
T16
AC1
B3
Pin arangement see outlines
IK10 PS18
LMNNot for new design 9
IGBTs
Symbol
VCES
VGES
IC25 IC80
ICM VCEK
tSC (SCSOA)
Ptot
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200 ± 20
V V
TC = 25°C TC = 80°C
VGE = ±15 V; RG = 82 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH
VCE = VCES; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C non-repetitive
30 21
35 VCES
10
A A A
µs
TC = 25°C
130 W
Symbol
Conditions
Characteristic Values
(T = 25°C, unless otherwise specified) VJ min. typ. max.
VCE(sat)
IC = 25 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C
2.6 2.9
VGE(th)
IC = 0.6 mA; VGE = VCE
4.5
I
CES
V =V ; CE CES
V = 0 V; GE
TVJ =
25°C
TVJ = 125°C
IGES VCE = 0 V; VGE = ± 20 V
td(on) tr td(off) t
f
Eon E
off
Inductive load, TVJ = 125°C VCE = 600 V; IC = 17.5 A VGE = 15/0 V; RG = 82 Ω
100 75
500 70 2.7 2.1
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz
1
RthJC RthJH
(per IGBT) with heatsink compound (0.42 K/m.K; 50 µm)
1.92
IXYS reserves the right to change limits, test conditions and dimensions.
3.3 V V
6.5 V
0.9 mA 3.7 mA
100 nA
ns ns ns ns mJ mJ
nF
0.96 K/W K/W
© 2006 IXYS All rights reserved
Features NPT IGBT's
- positive temperature coeffi...
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