IGBT Modules. VIO25-12P1 Datasheet

VIO25-12P1 Modules. Datasheet pdf. Equivalent


Part VIO25-12P1
Description IGBT Modules
Feature VDI 25-12P1 VII 25-12P1 VID 25-12P1 VIO 25-12P1 IGBT Modules in ECO-PAC 2 Short Circuit SOA Capabil.
Manufacture IXYS
Datasheet
Download VIO25-12P1 Datasheet


VDI 25-12P1 VII 25-12P1 VID 25-12P1 VIO 25-12P1 IGBT Module VIO25-12P1 Datasheet
Recommendation Recommendation Datasheet VIO25-12P1 Datasheet




VIO25-12P1
VDI 25-12P1 VII 25-12P1
VID 25-12P1 VIO 25-12P1
IGBT Modules in ECO-PAC 2
Short Circuit SOA Capability
Square RBSOA
Preliminary data sheet
VIO
A1
S18
VII
P9
L9
X13
E2 NTC
G10
X15
K10
X18
X16
VID
X15
L9
NTC
X16
F1
IC25 = 30 A
VCES
= 1200 V
V =CE(sat) typ. 2.6 V
VDI
X15
L9
NTC
X16
T16
B3
Pin arangement see outlines
IGBTs
Symbol
VCES
VGES
IC25
IC80
ICM
VCEK
tSC
(SCSOA)
Ptot
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
± 20
V
V
TC = 25°C
TC = 80°C
VGE = ±15 V; RG = 82 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
VCE = VCES; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C
non-repetitive
30
21
35
VCES
10
A
A
A
µs
TC = 25°C
130 W
Symbol
Conditions
Characteristic Values
(T = 25°C, unless otherwise specified)
VJ
min. typ. max.
VCE(sat)
IC = 25 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
2.6
2.9
VGE(th)
IC = 0.6 mA; VGE = VCE
4.5
I
CES
V =V ;
CE CES
V = 0 V;
GE
TVJ =
25°C
TVJ = 125°C
IGES VCE = 0 V; VGE = ± 20 V
td(on)
tr
td(off)
t
f
Eon
E
off
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 17.5 A
VGE = 15/0 V; RG = 82 Ω
100
75
500
70
2.7
2.1
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz
1
RthJC
RthJH
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
1.92
IXYS reserves the right to change limits, test conditions and dimensions.
3.3 V
V
6.5 V
0.9 mA
3.7 mA
100 nA
ns
ns
ns
ns
mJ
mJ
nF
0.96 K/W
K/W
© 2006 IXYS All rights reserved
Features
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
• FRED diodes
- fast reverse recovery
- low forward voltage
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Advantages
• space and weight savings
• reduced protection circuits
• leads with expansion bend for stress relief
Typical Applications
• AC and DC motor control
• AC servo and robot drives
• power supplies
• welding inverters
Recommended replacement:
Please contact your local
sales office
1-4



VIO25-12P1
VDI 25-12P1 VII 25-12P1
VID 25-12P1 VIO 25-12P1
Reverse diodes (FRED)
Symbol
Conditions
IF25 TC = 25°C
IF80 TC = 80°C
Maximum Ratings
26 A
17 A
Symbol
Conditions
Characteristic Values
min. typ. max.
VF
IRM
trr
RthJC
RthJH
IF = 17.5 A; TVJ = 25°C
TVJ = 125°C
IF = 15 A; diF/dt = 400 A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
2.48 2.79 V
1.84 V
16 A
130 ns
2.3 K/W
4.6 K/W
Temperature Sensor NTC
Symbol
Conditions
R
25
B25/50
T = 25°C
Characteristic Values
min. typ. max.
4.75 5.0 5.25 kΩ
3375
K
Module
Symbol
TVJ
Tstg
V
ISOL
Md
a
Conditions
I 1 mA; 50/60 Hz
ISOL
mounting torque (M4)
Max. allowable acceleration
Maximum Ratings
-40...+150
-40...+150
3000
1.5 - 2.0
14 - 18
50
°C
°C
V~
Nm
lb.in.
m/s2
Symbol
Conditions
dS
dA
Weight
Creepage distance on surface (Pin to heatsink)
Strike distance in air (Pin to heatsink)
Data according to IEC 60747 and refer to a single
transistor or diode unless otherwise stated.
VID
Characteristic Values
min. typ. max.
11.2 mm
11.2 mm
24 g
VII
VIO
VDI
B3
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
2-4







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)