MCH3484

MCH3484 Power MOSFET 20V, 40mΩ, 4.5A, Single N-Channel www.onsemi.com Features  On-Resistance RDS(on)1=33m (typ)  0.9V Drive  Pb-Free, Halogen Free and RoHS Compliance  ESD Diode-Protected Gate Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID Drain Current (Pulse) PW10s, duty cycle1% IDP Power Dissipation When mounted on ceramic substrate (900mm20.8mm) PD Junction Temperature Tj Operating Temperature Topr Storage Temperature Tstg Value 20 5 4.5 18 1.0 150 5 to +150 55 to +150 Unit V V A A W C C C Electrical Connection N-Channel 3 1 1 : Gate 2 : Source 2 3 : Drain Packing Type : TL Marking FR TL LOT No. LOT No. Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (900mm2  0.8mm) Symbol RJA Value 125 Unit C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 January 2015 - Rev. 2 1 Publication Order Number : MCH3484/D Electrical Characteristics at Ta  25C Parameter Symbol Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Gate Threshold...