Power MOSFET. MCH3484 Datasheet

MCH3484 MOSFET. Datasheet pdf. Equivalent


Part MCH3484
Description Power MOSFET
Feature MCH3484 Power MOSFET 20V, 40mΩ, 4.5A, Single N-Channel www.onsemi.com Features  On-Resistance RDS.
Manufacture ON Semiconductor
Datasheet
Download MCH3484 Datasheet


MCH3484 Power MOSFET 20V, 40mΩ, 4.5A, Single N-Channel www. MCH3484 Datasheet
Recommendation Recommendation Datasheet MCH3484 Datasheet




MCH3484
MCH3484
Power MOSFET
20V, 40m, 4.5A, Single N-Channel
www.onsemi.com
Features
On-Resistance RDS(on)1=33m(typ)
0.9V Drive
Pb-Free, Halogen Free and RoHS Compliance
ESD Diode-Protected Gate
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
VDSS
VGSS
ID
Drain Current (Pulse)
PW10s, duty cycle1%
IDP
Power Dissipation
When mounted on ceramic substrate
(900mm20.8mm)
PD
Junction Temperature
Tj
Operating Temperature
Topr
Storage Temperature
Tstg
Value
20
5
4.5
18
1.0
150
5 to +150
55 to +150
Unit
V
V
A
A
W
C
C
C
Electrical Connection
N-Channel
3
1
1 : Gate
2 : Source
2 3 : Drain
Packing Type : TL Marking
FR
TL
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm2 0.8mm)
Symbol
RJA
Value
125
Unit
C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
January 2015 - Rev. 2
1
Publication Order Number :
MCH3484/D



MCH3484
Electrical Characteristics at Ta 25C
Parameter
Symbol
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
RDS(on)4
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
MCH3484
Conditions
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±4V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=2A
ID=2A, VGS=2.5V
ID=1A, VGS=1.8V
ID=0.5A, VGS=1.2V
ID=0.1A, VGS=0.9V
VDS=10V, f=1MHz
See specified Test Circuit
VDS=10V, VGS=2.5V, ID=4.5A
IS=4.5A, VGS=0V
min
20
Value
typ
0.3
5.6
33
37
79
165
630
75
65
8.9
49
63
57
11
0.9
1.8
0.8
max
1
10
0.8
40
49
119
330
1.2
Unit
V
A
A
V
S
m
m
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
2.5V
0V
VIN
PW=10s
D.C.1%
G
VDD=10V
ID=2A
RL=5
D VOUT
MCH3484
P.G 50S
www.onsemi.com
2







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