Power MOSFET. CPH6442 Datasheet

CPH6442 MOSFET. Datasheet pdf. Equivalent


Part CPH6442
Description Power MOSFET
Feature CPH6442 Power MOSFET 60V, 43mΩ, 6A, Single N-Channel www.onsemi.com Features • 4V Drive • Low On-R.
Manufacture ON Semiconductor
Datasheet
Download CPH6442 Datasheet


Ordering number : ENA1242 CPH6442 www.DataSheet4U.com SANY CPH6442 Datasheet
Ordering number : ENA1242 CPH6442 www.DataSheet4U.com SANY CPH6442 Datasheet
CPH6442 Power MOSFET 60V, 43mΩ, 6A, Single N-Channel www.on CPH6442 Datasheet
Recommendation Recommendation Datasheet CPH6442 Datasheet




CPH6442
CPH6442
Power MOSFET
60V, 43m, 6A, Single N-Channel
www.onsemi.com
Features
4V Drive
Low On-Resistance
ESD Diode-Protected Gate
Pb-Free, and RoHS Compliance
Halogen Free Compliance : CPH6442-TL-W
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
VDSS
VGSS
ID
Drain Current (Pulse)
PW10μs, duty cycle1%
IDP
Power Dissipation
When mounted on ceramic substrate
(900mm2 × 0.8mm)
PD
Junction Temperature
Tj
Storage Temperature
Tstg
Value
60
±20
6
24
1.6
150
55 to +150
Unit
V
V
A
A
W
°C
°C
VDSS
60V
RDS(on) Max
43 m@10V
59 m@4.5V
65 m@4V
ID Max
6A
Electrical Connection
N-Channel
1, 2, 5, 6
3
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
4 6 : Drain
Packing Type : TL
Marking
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm2 × 0.8mm)
Symbol
RθJA
Value
Unit
78.1
°C/W
TL
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
March 2015 - Rev. 3
1
Publication Order Number :
CPH6442/D



CPH6442
Electrical Characteristics at Ta = 25°C
Parameter
Symbol
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
CPH6442
Conditions
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=3A
ID=3A, VGS=10V
ID=1.5A, VGS=4.5V
ID=1.5A, VGS=4V
VDS=20V, f=1MHz
See specified Test Circuit
VDS=30V, VGS=10V, ID=6A
IS=6A, VGS=0V
min
60
Value
typ
1.2
2.6 4.4
33
42
46
1040
90
55
12
18
80
35
20
3.0
4.2
0.82
max
1
±10
2.6
43
59
65
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.1%
G
VDD=30V
ID=3A
RL=10Ω
D VOUT
CPH6442
P.G 50Ω S
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