Power MOSFET. ECH8601M Datasheet

ECH8601M MOSFET. Datasheet pdf. Equivalent


Part ECH8601M
Description N-Channel Power MOSFET
Feature Ordering number : ENA1174A ECH8601M N-Channel Power MOSFET 24V, 8A, 23mΩ, Dual ECH8 http://onsemi..
Manufacture ON Semiconductor
Datasheet
Download ECH8601M Datasheet


Ordering number : ENA1174A ECH8601M N-Channel Power MOSFET ECH8601M Datasheet
Ordering number : ENA1174 ECH8601M SANYO Semiconductors DA ECH8601M Datasheet
Recommendation Recommendation Datasheet ECH8601M Datasheet




ECH8601M
Ordering number : ENA1174A
ECH8601M
N-Channel Power MOSFET
24V, 8A, 23mΩ, Dual ECH8
http://onsemi.com
Features
Low ON-resistance
2.5V drive
Common-drain type
Protection diode in
Built-in gate protection resistor
Best suited for LiB charging and discharging switch
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (1000mm2×0.8mm) 1unit
When mounted on ceramic substrate (1000mm2×0.8mm)
Ratings
24
±12
8
60
1.5
1.6
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-003
Top View
2.9
85
ECH8601M-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TL
TL Lot No.
1
0.65
4
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
ECH8
Electrical Connection
8765
1234
Semiconductor Components Industries, LLC, 2013
July, 2013
50912 TKIM/72308PE TIIM TC-00001533 No. A1174-1/7



ECH8601M
ECH8601M
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
RDS(on)4
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4A
ID=4A, VGS=4.5V
ID=4A, VGS=4.0V
ID=4A, VGS=3.1V
ID=2A, VGS=2.5V
See specied Test Circuit.
VDS=10V, VGS=4.5V, ID=8A
IS=8A, VGS=0V
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10μs
D.C.1%
G
VDD=10V
ID=4A
RL=2.5Ω
D VOUT
Rg
P.G
50Ω
ECH8601M
S
Rg=1kΩ
Ordering Information
Device
ECH8601M-TL-H
Package
ECH8
Shipping
3,000pcs./reel
min
24
Ratings
typ
0.5
3.1
13.5
14
14.5
16
5.3
17
18
20
24
300
1000
3000
1800
7.5
1.5
2.0
0.8
max
1
±10
1.3
23
24
30
35
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
mΩ
ns
ns
ns
ns
nC
nC
nC
V
memo
Pb Free and Halogen Free
No. A1174-2/7







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)