Power MOSFET. CPH5871 Datasheet

CPH5871 MOSFET. Datasheet pdf. Equivalent


Part CPH5871
Description Power MOSFET
Feature CPH5871 Power MOSFET 30V, 52mΩ, 3.5A, Single N-Channel with Schottky Diode www.onsemi.com Features.
Manufacture ON Semiconductor
Datasheet
Download CPH5871 Datasheet


CPH5871 Power MOSFET 30V, 52mΩ, 3.5A, Single N-Channel with CPH5871 Datasheet
Recommendation Recommendation Datasheet CPH5871 Datasheet




CPH5871
CPH5871
Power MOSFET
30V, 52m, 3.5A, Single N-Channel
with Schottky Diode
www.onsemi.com
Features
Composite Type with a N-channel Sillicon MOSFET and a
Schottky Barrier Diode Contained in One Package
Facilitating High-density Mounting
ESD Diode-Protected Gate
Pb-Free, Halogen Free and RoHS Compliance
[MOSFET] High Speed Switching
[MOSFET] 1.8V Drive
[SBD] Short Reverse Recovery Time
[SBD] Low Forward Voltage
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
[MOSFET]
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
VDSS
VGSS
ID
Drain Current (Pulse)
PW10μs, duty cycle1%
IDP
Power Dissipation
When mounted on ceramic substrate
(600mm2 × 0.8mm) 1unit
Junction Temperature
PD
Tj
Storage Temperature
Tstg
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
VRRM
VRSM
IO
Surge Forward Current
50Hz sine wave, 1cycle
IFSM
Junction Temperature
Tj
Storage Temperature
Tstg
Value
Unit
30 V
±12 V
3.5 A
14 A
0.9
150
55 to +125
30
35
1
10
55 to +125
55 to +125
W
°C
°C
V
V
A
A
°C
°C
VDSS
[MOSFET]
30V
RDS(on) Max
52m@ 4.5V
74m@ 2.5V
132m@ 1.8V
ID Max
3.5A
Electrical Connection
N-Channel
5 43
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
12
Packing Type : TL Marking
TL
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate
(600mm2 × 0.8mm) 1unit
Symbol
RθJA
Value
Unit
138.8 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
March 2015 - Rev. 2
1
Publication Order Number :
CPH5871/D



CPH5871
Electrical Characteristics at Ta = 25°C
Parameter
Symbol
[MOSFET]
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VR
VF1
VF2
IR
C
trr
CPH5871
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=2A
ID=2A, VGS=4.5V
ID=1A, VGS=2.5V
ID=0.5A, VGS=1.8V
VDS=10V, f=1MHz
See specified Test Circuit
VDS=15V, VGS=4.5V, ID=3.5A
IS=3.5A, VGS=0V
IR=0.5mA
IF=0.7A
IF=1A
VR=16V
VR=10V, f=1MHz, 1cycle
IF= IR=100mA, See specified Test Circuit
Value
Unit
min typ max
30 V
1 μA
±10 μA
0.4 1.3 V
2.0 3.4
S
40 52 mΩ
53 74 mΩ
82 132 mΩ
430 pF
59 pF
38 pF
10 ns
41 ns
36 ns
37 ns
4.7 nC
0.8 nC
1.1 nC
0.8 1.2 V
30 V
0.45
0.5 V
0.48
0.53
V
15 μA
27 pF
10 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
(MOSFET)
VIN
4.5V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=15V
ID=2A
RL=7.5Ω
D VOUT
P.G
50Ω
CPH5871
S
trr Test Circuit
(SBD)
Duty≤10%
50Ω
10μs
100Ω
--5V
10Ω
trr
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2







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