Power MOSFET. ECH8315 Datasheet

ECH8315 MOSFET. Datasheet pdf. Equivalent


Part ECH8315
Description Power MOSFET
Feature ECH8315 Power MOSFET –30V, 25mΩ, –7.5A, Single P-Channel This Power MOSFET is produced using ON Sem.
Manufacture ON Semiconductor
Datasheet
Download ECH8315 Datasheet


ECH8315 Power MOSFET –30V, 25mΩ, –7.5A, Single P-Channel Th ECH8315 Datasheet
Recommendation Recommendation Datasheet ECH8315 Datasheet




ECH8315
ECH8315
Power MOSFET
–30V, 25m, –7.5A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to low on resistance. This devices
is suitable for applications with low on resistance requirements.
Features
Low On-Resistance
4V drive
ESD Diode-Protected Gate
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
Load Switch
Protection Switch for Lithium-ion Battery
Motor Driver
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
30 V
Gate to Source Voltage
VGSS
20 V
Drain Current (DC)
ID 7.5 A
Drain Current (Pulse)
PW 10s, duty cycle 1%
IDP
40 A
Power Dissipation
When mounted on ceramic substrate
(900mm2 0.8mm)
PD
1.5 W
Junction Temperature
Tj 150 C
Storage Temperature
Tstg
55 to +150
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm2 0.8mm)
Symbol
RJA
Value
Unit
83.3 C/W
www.onsemi.com
VDSS
30V
RDS(on) Max
25m@ 10V
44m@ 4.5V
49m@ 4V
ID Max
7.5A
ELECTRICAL CONNECTION
P-Channel
87 6 5
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
12 3 4
PACKING TYPE : TL
TL
MARKING
JS
Lot No.
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
April 2015 - Rev. 2
1
Publication Order Number :
ECH8315/D



ECH8315
ECH8315
ELECTRICAL CHARACTERISTICS at Ta 25C (Note 2)
Parameter
Symbol
Conditions
Value
Unit
min typ max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State
Resistance
Input Capacitance
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=3.5A
ID=3.5A, VGS=10V
ID=2A, VGS=4.5V
ID=2A, VGS=4V
30 V
1 A
10 A
1.2 2.6 V
5 8.4
S
19 25 m
31 44 m
35 49 m
875 pF
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
VDS=10V, f=1MHz
200 pF
150 pF
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
td(on)
tr
td(off)
tf
Qg
See specified Test Circuit
8.1 ns
33 ns
92 ns
60 ns
18 nC
Gate to Source Charge
Gate to Drain “Miller” Charge
Qgs VDS=15V, VGS=10V, ID=7.5A
Qgd
2.1 nC
4.7 nC
Forward Diode Voltage
VSD
IS=7.5A, VGS=0V
0.82
1.2 V
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10s
D.C.1%
G
VDD= --15V
ID= --3.5A
RL=4.3
D VOUT
ECH8315
P.G 50S
www.onsemi.com
2







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