Power MOSFET. ECH8309 Datasheet

ECH8309 MOSFET. Datasheet pdf. Equivalent


Part ECH8309
Description P-Channel Power MOSFET
Feature Ordering number : ENA1418B ECH8309 P-Channel Power MOSFET –12V, –9.5A, 16mΩ, Single ECH8 http://on.
Manufacture ON Semiconductor
Datasheet
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Ordering number : ENA1418B ECH8309 P-Channel Power MOSFET – ECH8309 Datasheet
Recommendation Recommendation Datasheet ECH8309 Datasheet




ECH8309
Ordering number : ENA1418B
ECH8309
P-Channel Power MOSFET
–12V, –9.5A, 16mΩ, Single ECH8
http://onsemi.com
Features
1.8V drive
Halogen free compliance
Protection diode in
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
--12
±10
--9.5
--40
1.5
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-002
Top View
2.9
85
ECH8309-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
JL
Lot No.
TL
1
0.65
4
0.3
Bottom View
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
ECH8
Electrical Connection
87 6 5
12 3 4
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM/22509PE MSIM TC-00001633 No. A1418-1/7



ECH8309
ECH8309
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--1mA, VGS=0V
VDS=--12V, VGS=0V
VGS=±8V, VDS=0V
VDS=--6V, ID=--1mA
VDS=--6V, ID=--4.5A
ID=--4.5A, VGS=--4.5V
ID=--2A, VGS=--2.5V
ID=--1A, VGS=--1.8V
VDS=--6V, f=1MHz
See specied Test Circuit.
VDS=--6V, VGS=--4.5V, ID=--9.5A
IS=--9.5A, VGS=0V
Switching Time Test Circuit
VIN
0V
--4.5V
VIN
PW=10μs
D.C.1%
G
VDD= --6V
ID= --4.5A
RL=1.3Ω
D VOUT
ECH8309
P.G 50Ω S
min
--12
Ratings
typ
--0.4
9.6
16
12
18
30
1780
540
390
22
110
157
123
18
2.8
4.9
--0.8
max
--10
±10
--1.3
16
26
53
--1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Ordering Information
Device
ECH8309-TL-H
Package
ECH8
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1418-2/7







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