IGBT Modules. VWI35-06P1 Datasheet

VWI35-06P1 Modules. Datasheet pdf. Equivalent


Part VWI35-06P1
Description IGBT Modules
Feature IGBT Module Sixpack in ECO-PAC 2 VWI 35-06P1 I = 31 A C25 VCES = 600 V VCE(sat) typ. = 1.9 V .
Manufacture IXYS
Datasheet
Download VWI35-06P1 Datasheet


IGBT Module Sixpack in ECO-PAC 2 VWI 35-06P1 I = 31 A C25 VWI35-06P1 Datasheet
Recommendation Recommendation Datasheet VWI35-06P1 Datasheet




VWI35-06P1
IGBT Module
Sixpack in ECO-PAC 2
VWI 35-06P1
I = 31 A
C25
VCES
= 600 V
VCE(sat) typ. = 1.9 V
S9
N 9 X 18
L9
N 5 R 5 W 14
A5
D5
H5
C 1 K 10
A1
F3
G1
Pin arangement see outlines
IGBTs
Symbol
VCES
VGES
IC25
IC80
ICM
VCEK
tSC
(SCSOA)
Ptot
Symbol
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600 V
± 20 V
TC = 25°C
TC = 80°C
VGE
=
±15
V;
R
G
=
47
;
TVJ
=
125°C
RBSOA, Clamped inductive load; L = 100 µH
VCE = 600 V; VGE = ±15 V; RG = 47 ; TVJ = 125°C
non-repetitive
31
21
40
VCES
10
A
A
A
µs
TC = 25°C
100 W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
Features
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
• FRED diodes
- fast reverse recovery
- low forward voltage
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Typical Applications
• AC drives
• power supplies with power factor
correction
V
CE(sat)
VGE(th)
ICES
IGES
td(on)
t
r
td(off)
t
f
Eon
Eoff
C
ies
QGon
RthJC
R
thJH
I
C
=
20
A;
V
GE
=
15
V;
TVJ
=
25°C
TVJ = 125°C
IC = 0.5 mA; VGE = VCE
VCE = VCES;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 10 A
V
GE
=
±15
V;
R
G
=
82
V = 25 V; V = 0 V; f = 1 MHz
CE GE
VCE = 300 V; VGE = 15 V; IC = 20 A
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
1.9
2.2
4.5
0.7
50
55
300
30
0.9
0.7
1100
65
2.5
2.4 V
V
6.5 V
0.6 mA
mA
100 nA
ns
ns
ns
ns
mJ
mJ
pF
nC
1.3 K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
www.ixys.net
1-5
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670



VWI35-06P1
VWI 35-06P1
Diodes
Symbol
IF25
IF80
Conditions
TC = 25°C
TC = 80°C
Maximum Ratings
35 A
22 A
Dimensions in mm (1 mm = 0.0394")
Symbol
Conditions
Characteristic Values
min. typ. max.
VF IF = 20 A; TVJ = 25°C
TVJ = 125°C
1.9 2.1 V
1.4 V
IRM IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C
trr VR = 300 V; VGE = 0 V
13 A
90 ns
R
thJC
RthJH
with heatsink compound (0.42 K/m.K; 50 µm)
2.3 K/W
4.6 K/W
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
Component
Symbol
TVJ
T
stg
V
ISOL
Md
Conditions
I
ISOL
1
mA;
50/60
Hz;
t
=
1
s
mounting torque (M4)
a Max. allowable acceleration
Maximum Ratings
-40...+150
-40...+125
3600
1.5 - 2.0
14 - 18
50
°C
°C
V~
Nm
lb.in.
m/s2
Symbol
dS
dA
Weight
Conditions
Creepage distance on surface (Pin to heatsink)
Strike distance in air (Pin to heatsink)
Characteristic Values
min. typ. max.
11.2
11.2
mm
mm
24 g
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
2-5







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